Reflection high-energy electron diffraction (RHEED) study of MBE growth of ZnSe on GaAs(1 1 1)B surfaces

• Published in: Applied surface science Vol. 181; no. 1; pp. 94 - 102
• Main Authors: Gard, F.S, Riley, J.D, Leckey, R, Usher, B.F
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 03.09.2001; Elsevier Science
• Subjects: AFM; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Gallium arsenide; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular beam epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics; RHEED; Structure and morphology; thickness; Surface diffusion; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Zinc selenide; Molecular beam epitaxy; AFM; Zinc selenide; RHEED; Surface diffusion; Gallium arsenide; Atomic force microscopy; Inorganic compounds; Semiconductor materials; Morphology; Transition element compounds; Zinc selenides; Experimental study
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(01)00380-4

A qualitative study of reflection high-energy electron diffraction (RHEED) patterns shows two distinct surface morphologies for ZnSe epilayers grown on GaAs(1 1 1)B surfaces. These patterns also reveal a reversible transition between these surface structures if growth conditions are modified. Creation of ZnSe mounds on a rough-surface background has been observed for substrate temperatures higher than 400°C and for Se/Zn atomic flux ratios less than 1.00±0.05. A “wavy” surface structure, with no mounds, was observed for substrate temperatures less than 400°C and for Se/Zn atomic flux ratios higher than 1.00±0.05.