Temperature dependence of the sticking coefficient in atomic layer deposition

• Published in: Applied surface science Vol. 256; no. 12; pp. 3778 - 3782
• Main Authors: Rose, M., Bartha, J.W., Endler, I.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.04.2010; Elsevier
• Subjects: Atomic layer deposition; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deep trench; Exact sciences and technology; Physics; Simulation; Sticking coefficient; TEMAHf; Temperature dependence; Temperature dependence; Atomic layer deposition; Simulation; TEMAHf; Deep trench; Sticking coefficient
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2010.01.025

The temperature dependence of the sticking coefficient (SC) of precursor molecules used in atomic layer deposition (ALD) was investigated. Tetrakis(ethylmethylamino)hafnium (TEMAHf) and Pentamethylcyclopentadienyltitan-trimethoxid (Cp*Ti(OMe) 3) were used in combination with ozone to deposit hafnium dioxide and titanium dioxide films at different substrate temperatures. The SC of TEMAHf was determined at 180, 230, and 270 °C. The SC of TEMAHf depends exponentially on the substrate temperature. The activation energy and the pre-exponential factor were obtained for this ALD process. The SC of Cp*Ti(OMe) 3 was determined at 270 °C. A possible explanation for the small SC of Cp*Ti(OMe) 3 could be the reduced symmetry of the precursor molecule. Therefore, symmetric precursor molecules and high process temperatures appear beneficial for efficient ALD processes.