Micro-Raman characterization of stress distribution within free standing mono- and poly-crystalline silicon membranes

Stress measurements were performed in a free standing monocrystalline cantilever and a polycrystalline silicon membrane suspended over a deep cavity, using micro-Raman spectroscopy. These micromechanical structures were fabricated using porous silicon as a sacrificial layer. The results show that th...

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Bibliographic Details
Published inMicroelectronic engineering Vol. 41; pp. 469 - 472
Main Authors Siakavellas, M., Anastassakis, E., Kaltsas, G., Nassiopoulos, A.G.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.03.1998
Elsevier Science
Subjects
Applied sciences
Electronics
Exact sciences and technology
Testing, measurement, noise and reliability
Stress distribution
Test
Free structure
Integrated circuit
Membrane
Silicon
Raman spectrometry
Cantilever
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Summary:Stress measurements were performed in a free standing monocrystalline cantilever and a polycrystalline silicon membrane suspended over a deep cavity, using micro-Raman spectroscopy. These micromechanical structures were fabricated using porous silicon as a sacrificial layer. The results show that the stress varies across the membrane and the cantilever, the level of stress in the latter being lower than in the membrane.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(98)00109-9