Advancing frequency fine-tuning: a theoretical approach to a novel metamaterial-inspired Bi-layer resonator

Abstract This study presents a novel adjustable device designed for precise frequency tuning within the S-band of the microwave spectra. In addition to the geometrical design and dielectric behavior of the resonator, this study identifies an influential governing factor that affects the resonant fre...

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Bibliographic Details
Published inMaterials research express Vol. 10; no. 11; pp. 115801 - 115817
Main Authors Mishra, Piyush, Singh, Bhupendra Pratap, Agrawal, Ved Varun
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.11.2023
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Summary:Abstract This study presents a novel adjustable device designed for precise frequency tuning within the S-band of the microwave spectra. In addition to the geometrical design and dielectric behavior of the resonator, this study identifies an influential governing factor that affects the resonant frequency. The proposed method utilizes a bi-layer split ring resonator configuration implemented on a 4 × 4 cm FR4 epoxy substrate with a dielectric constant of 4.4. The substrate is coated with a 35 μ m- thick layer of copper and patterned as split ring resonator. Frequency tuning was achieved by spatially separating the two parallel split ring resonators in increments of 800 μ m. This innovative approach allows for a shift in the resonant frequency range from 2.36 GHz to 2.61 GHz, covering the desired frequencies in the S-band for applications such as biomedical and wireless communications. This study demonstrates that the alteration in the frequency domain is dependent on the distance between the two layers of split ring resonators. Compared to existing frequency tuning mechanisms, this adjustable bi-layer split ring resonator offers numerous advantages including simplicity, cost-effectiveness, and high sensitivity. The research employs a combination of finite-element simulations and theoretical analysis to validate the findings.
Bibliography:MRX-128011.R2
ISSN:2053-1591
2053-1591
DOI:10.1088/2053-1591/ad05b5