A Physics-Based Model for Mobile-Ionic Field-Effect Transistors With Steep Subthreshold Swing

• Published in: IEEE journal of the Electron Devices Society Vol. 10; pp. 706 - 711
• Main Authors: Chen, Jiajia, Liu, Huan, Jin, Chengji, Jia, Xiaole, Yu, Xiao, Peng, Yue, Cheng, Ran, Chen, Bing, Liu, Yan, Hao, Yue, Han, Genquan
• Format: Journal Article
• Language: English
• Published: New York IEEE 2022; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Dielectrics; Electric fields; Ferroelectric materials; ferroelectric-like; Ferroelectricity; Field effect transistors; Green's functions; Ions; Mathematical models; mobile-ionic field-effect transistor (MIFET); Nonvolatile memory; Poisson equation; Poisson equations; Predictive models; Semiconductor devices; Subthreshold swing (SS); Voltage; Zirconium dioxide; ZrO
• ISSN: 2168-6734; 2168-6734
• DOI: 10.1109/JEDS.2022.3202928

A physics-based model and the corresponding simulation framework for the mobile-ionic field-effect transistor (MIFET) exhibiting the ferroelectric-like behaviors are innovatively proposed based on two-dimensional (2D) Poisson's equation and non-equilibrium Green's function (NEGF), coupling with ion drift-diffusion equations. The simulation framework captures the dynamic distribution of mobile ions' concentrations within dielectric along the external electric field. TaN/amorphous-ZrO2/TaN capacitors are experimentally characterized for the model calibration. It is proved that the mobile ions dominate the ferroelectric-like behaviors in MIFETs. Sub-60 mV/decade can be achieved in MIFETs based on the proposed model, which is consistent with the experimental results.