Control of photoluminescence energy of Si nanocrystals by Ge doping

SiGe alloy nanocrystals (nc-Si 1− x Ge x ) as small as 4–5 nm in diameter were prepared and their photoluminescence (PL) properties were studied as a function of the Ge content. The growth of nc-Si 1− x Ge x in SiO 2 matrices was confirmed by high-resolution transmission electron microscopy, electro...

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Bibliographic Details
Published inJournal of luminescence Vol. 87; pp. 350 - 352
Main Authors Takeoka, Shinji, Toshikiyo, Kimiaki, Fujii, Minoru, Hayashi, Shinji, Yamamoto, Keiichi
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.05.2000
Elsevier
Subjects
Alloy crystals
Amorphous semiconductors; glasses
Amorphous semiconductors; glasses; nanocrystalline materials
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Photoluminescence
Physics
Si nanocrystals
Alloy crystals
Si nanocrystals
Photoluminescence
Confinement
Inorganic compounds
Semiconductor materials
Radiative recombination
Binary compounds
Composition effect
Electron hole pair
Experimental study
Fabrication property relation
Energy gap
Germanium silicides
Charge carrier recombination
Nanocrystal
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Summary:SiGe alloy nanocrystals (nc-Si 1− x Ge x ) as small as 4–5 nm in diameter were prepared and their photoluminescence (PL) properties were studied as a function of the Ge content. The growth of nc-Si 1− x Ge x in SiO 2 matrices was confirmed by high-resolution transmission electron microscopy, electron diffraction and Raman spectroscopy. The PL spectra of nc-Si 1− x Ge x were found to be sensitive to the Ge content. For the sample without Ge doping, a PL peak was observed at around 1.45 eV; the peak was assigned to the radiative recombination of electron–hole pairs confined in Si nanocrystals. As the Ge content increased, the PL peak shifted to lower energies although the average diameter of nc-Si 1− x Ge x was almost the same for all the samples. This result indicates that the Ge doping is an effective method to control the band gap energy of Si nanocrystals.
ISSN:0022-2313
1872-7883
DOI:10.1016/S0022-2313(99)00378-6