A New High-Gain Operational Amplifier Using Transconductance-Enhancement Topology Integrated With Metal Oxide TFTs

• Published in: IEEE journal of the Electron Devices Society Vol. 7; pp. 111 - 117
• Main Authors: Chen, Zhuo-Jia, Peng, Jun-Biao, Xu, Wen-Xing, Wu, Jian-Dong, Zhou, Lei, Wu, Wei-Jing, Zou, Jian-Hua, Xu, Miao, Wang, Lei, Liu, Yu-Rong
• Format: Journal Article
• Language: English
• Published: New York IEEE 2019; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Amplification; Feedback circuits; Gain; Logic gates; metal oxide thin-film transistors (TFTs); Metal oxides; Metals; Operational amplifier; Operational amplifiers; Positive feedback; Power consumption; Semiconductor devices; Thin film transistors; Topology; Transconductance; transconductance-enhancement topology; Voltage gain
• ISSN: 2168-6734; 2168-6734
• DOI: 10.1109/JEDS.2018.2883585

This paper presents an integrated operational amplifier (OPAMP) consisting of only n-type metal oxide thin-film transistors. In addition to using positive feedback in the input differential pair, a transconductance-enhancement topology is applied to improve the gain of the OPAMP. The OPAMP has a voltage gain (A v ) of 29.54 dB over a 3-dB bandwidth of 9.33 kHz at a supply voltage of 15 V. The unity-gain frequency, phase margin (PM), and dc power consumption (P DC ) are 180.2 kHz, 21.5° PM and 5.07 mW, respectively.