Industrial production of GaN and InGaN-light emitting diodes on SiC-substrates

• Published in: Journal of crystal growth Vol. 230; no. 3; pp. 497 - 502
• Main Authors: Zehnder, U., Weimar, A., Strauss, U., Fehrer, M., Hahn, B., Lugauer, H.-J., Härle, V.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.09.2001; Elsevier
• Subjects: Applied sciences; B1. Nitrides; B2. Semi-conducting gallium compounds; B3. Light emitting diodes; Electronics; Exact sciences and technology; Optoelectronic devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Testing, measurement, noise and reliability; B2. Semi-conducting gallium compounds; B1. Nitrides; B3. Light emitting diodes; Ternary compound; Performance evaluation; Industrial production; Binary compound; Gallium nitride; Optimization; Light emitting diode; Test; MOVPE method; Optical characteristic; Indium nitride; Blue light; Electrical characteristic
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(01)01304-5

Blue light emitting diodes (LEDs) based on GaN or InGaN have a large market, e.g. for communication, industry and automotive applications. Since 1998, OSRAM Opto Semiconductors has been producing blue LEDs on a large scale, concentrating on the automotive market. LEDs in the wavelength range 450–480 nm are grown by metalorganic vapour phase epitaxy (MOVPE) on SiC. This substrate material offers many advantages from the epitaxial and device processing points of view. To fulfil the strong consumer recommendations not only do the epitaxial processes have to be developed, but also improvements in chip technology and package design help to stabilise electrical and optical properties on these high level demands. For example, low forward voltages, high light output powers at 20 mA, low reverse currents, long term stability and high electrostatic discharge robustness have to be guaranteed in a temperature range of −55–+85°C and at a maximum humidity of 85%. Electrical and optical parameters were tested on every produced chip not only to remove LEDs before packaging, which do not meet the specifications, but to control and optimise the applied technological steps. As an example we demonstrate a testing method for controlling the process and optimising the p-contact.Optimisation of n- and p-contact as well as the improvement of epitaxy helped to increase the light output power from 1 mW in 1998 to more than 6 mW at present when mounted in a 5 mm radial lamp. All electrical parameters of these high brightness LEDs could also be improved or at least kept in the demanded specification range.