Formation of Gd oxide thin films on (111)Si

Formation of Gd oxide thin films on (111)Si has been investigated. A complicated multilayered structure was formed in Gd thin films on (111)Si annealed in O 2 ambient. On the other hand, a uniform oxide layer was formed in GdSi 2− x films on (111)Si oxidized in O 2 ambient. Oxidation mechanisms are...

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Bibliographic Details
Published inApplied surface science Vol. 142; no. 1; pp. 120 - 123
Main Authors Chen, J.C, Shen, G.H, Chen, L.J
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.04.1999
Elsevier Science
Subjects
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Gd metal
Gd oxide
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Silicide
Structure and morphology; thickness
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Vacuum deposition
61.16.Bg
SES
EE
AQ
OD
TI
Gd metal
Silicide
81.15.Ef
GAD
Gd oxide
Thin films
Gadolinium oxides
Annealing
Oxidation
ESCA
Experimental study
TEM
AES
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Summary:Formation of Gd oxide thin films on (111)Si has been investigated. A complicated multilayered structure was formed in Gd thin films on (111)Si annealed in O 2 ambient. On the other hand, a uniform oxide layer was formed in GdSi 2− x films on (111)Si oxidized in O 2 ambient. Oxidation mechanisms are discussed.
ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(98)00663-1