Drift Field Implementation in Large Pinned Photodiodes for Improved Charge Transfer Speed

We present a methodology for generating built-in drift fields in large photodiodes. With the aid of TCAD we demonstrate how non-uniform doping profiles can be implemented in a standard CMOS process using a single additional mask and controlled using the implant conditions and mask geometry. We demon...

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Bibliographic Details
Published inIEEE journal of the Electron Devices Society Vol. 6; pp. 413 - 419
Main Authors Hondongwa, Donald B., Fossum, Eric R.
Format Journal Article
LanguageEnglish
Published New York IEEE 2018
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Charge transfer
CMOS
CMOS image sensors
Doping
Doping profiles
Drift
Geometry
Implants
large photodiodes
Mathematical model
Photodiodes
pinned photodiodes
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Summary:We present a methodology for generating built-in drift fields in large photodiodes. With the aid of TCAD we demonstrate how non-uniform doping profiles can be implemented in a standard CMOS process using a single additional mask and controlled using the implant conditions and mask geometry. We demonstrate that the resulting doping profile creates a built-in drift field and simulates the effect of the drift field on the charge transfer speed. We show that implementing a drift field can improve charge transfer characteristics of the photodiode.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2018.2792311