A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTs

• Published in: IEEE journal of the Electron Devices Society Vol. 7; pp. 655 - 661
• Main Authors: Rahaman, Abidur, Chen, Yuanfeng, Hasan, Md. Mehedi, Jang, Jin
• Format: Journal Article
• Language: English
• Published: New York IEEE 2019; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Circuit design; Coplanar <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">a -IGZO TFTs; dual gate; Electrodes; Gain; Gallium; Glass substrates; Indium gallium zinc oxide; Logic gates; operational amplifier (op-amp); Operational amplifiers; Performance evaluation; Semiconductor devices; single gate; Slew rate; Substrates; Thin film transistors; Voltage gain; Zinc oxide
• ISSN: 2168-6734; 2168-6734
• DOI: 10.1109/JEDS.2019.2923208

We fabricate an operational amplifier (op-amp) composed with the coplanar amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The circuit consisted of 19-TFTs and designed on a glass substrate in both dual gate (DG) and single gate (SG) structure for performance evaluation. Having the yield of a total voltage gain (A v ) of 23.5 dB, a cutoff frequency (f c ) of 500 kHz, a unit gain frequency (f ug ) of 2.37 MHz, gain-bandwidth product (GBWP) of 7500 kHz, a slew rate (up/down) of (2.1/1.2) V/μs, and a phase margin (PM) of 102° at a supply voltage of ±10 V, the fabricated DG TFT op-amp demonstrates good performance among all a-IGZO-based literature.