Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy

• Published in: Surface science Vol. 376; no. 1-3; pp. 60 - 68
• Main Authors: Taskinen, M., Sopanen, M., Lipsanen, H., Tulkki, J., Tuomi, T., Ahopelto, J.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 10.04.1997; Amsterdam Elsevier Science; New York, NY
• Subjects: Atomic force microscopy; Chemical vapor deposition; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Indium arsenide; Indium phosphide; Luminescence; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Self-assembly; Surface structure; Vapor phase epitaxy; growth from vapor phase; Atomic force microscopy; Self-assembly; Indium arsenide; Luminescence; Chemical vapor deposition; Indium phosphide; Surface structure; Crystal growth; Temperature dependence; Inorganic compounds; Organometallic compounds; Photoluminescence; VPE; Experimental study; Island structure; Indium arsenides
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/S0039-6028(96)01597-X

The effects of growth temperature, InAs deposition thickness and deposition rate on the areal density, size, uniformity and spatial distribution of self-organized InAs nanoscale islands grown on exact and vicinal (100) InP substrates by metalorganic vapor-phase epitaxy are investigated in detail by AFM. At 500°C, the island density is found to increase as the InAs deposition thickness is increased, while the average island size decreases slightly. At growth temperatures above 500°C, larger inhomogenous islands also appear. Decreasing the deposition rate increases the island density and substrate coverage. The unintentional As/P exchange is found to have a significant influence on island formation by producing excess material for the islands. Low-temperature photoluminescence from the recombination of carriers in the buried InAs islands is observed in the 1.4 – 1.8 μm spectral region.