Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy

We analyzed the decomposition of Ga(CH3)3 (TMG) during the metal organic vapor phase epitaxy (MOVPE) of GaN on the basis of first-principles calculations and thermodynamic analysis. We performed activation energy calculations of TMG decomposition and determined the main reaction processes of TMG dur...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 57; no. 4S; p. 4
Main Authors Sekiguchi, Kazuki, Shirakawa, Hiroki, Chokawa, Kenta, Araidai, Masaaki, Kangawa, Yoshihiro, Kakimoto, Koichi, Shiraishi, Kenji
Format Journal Article
LanguageEnglish
Published Tokyo The Japan Society of Applied Physics 01.04.2018
Japanese Journal of Applied Physics
Subjects
Carrier gases
Decomposition
Decomposition reactions
Desorption
First principles
Gallium
Mathematical analysis
Metalorganic chemical vapor deposition
Vapor phase epitaxy
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Summary:We analyzed the decomposition of Ga(CH3)3 (TMG) during the metal organic vapor phase epitaxy (MOVPE) of GaN on the basis of first-principles calculations and thermodynamic analysis. We performed activation energy calculations of TMG decomposition and determined the main reaction processes of TMG during GaN MOVPE. We found that TMG reacts with the H2 carrier gas and that (CH3)2GaH is generated after the desorption of the methyl group. Next, (CH3)2GaH decomposes into (CH3)GaH2 and this decomposes into GaH3. Finally, GaH3 becomes GaH. In the MOVPE growth of GaN, TMG decomposes into GaH by the successive desorption of its methyl groups. The results presented here concur with recent high-resolution mass spectroscopy results.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.04FJ03