Development and applications of field emitter arrays in Japan

• Published in: Applied surface science Vol. 111; pp. 194 - 203
• Main Author: Itoh, Junji
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.02.1997; Elsevier Science
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Vacuum microelectronics; Field emitter; Review
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(96)00845-8

In this paper, I have presented an overview of research activities on vacuum microelectronics in Japan. First, I have introduced various structures and materials of field emitter arrays (FEAs) recently developed such as vertical, lateral, n/p-junction and diamond tips. Beam focusing results obtained with double-gated and in-plane-lens-structured FEAs have also been mentioned. Next, I have introduced various application devices of FEAs such as field emission displays (FEDs) and magnetic sensors. Then, I have presented evaluation techniques of FEA performances, especially pointing out the effectiveness of scanning Maxwell-stress microscopy (SMM) for the nano-scale evaluation of the structures and work function of the tips. Finally, I have discussed attempts made in the past few years to develop a new generation FEA capable of actively controlling and stabilizing the emission current. I have introduced a new Si FEA with a metal-oxide-semiconductor field-effect-transistor (MOSFET) structure recently developed. The current stabilization effects of resistor connections and tip integration have also been discussed with clear experimental results.