A Fully Integrated Class-J GaN MMIC Power Amplifier for 5-GHz WLAN 802.11ax Application

This letter presents a fully integrated Class-J GaN monolithic microwave circuit power amplifier (PA), which is fabricated in Woolfspeed 0.25-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> GaN-on-SiC technology. This PA is the...

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Bibliographic Details
Published inIEEE microwave and wireless components letters Vol. 28; no. 5; pp. 434 - 436
Main Authors Liu, Bei, Mao, Mengda, Boon, Chirn Chye, Choi, Pilsoon, Khanna, Devrishi, Fitzgerald, Eugene A.
Format Journal Article
LanguageEnglish
Published IEEE 01.05.2018
Subjects
80211ax
Class-J
Gallium nitride
GaN power amplifier (PA)
Harmonic analysis
Impedance
monolithic microwave circuit (MMIC)
Power generation
Power measurement
Wireless communication
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Summary:This letter presents a fully integrated Class-J GaN monolithic microwave circuit power amplifier (PA), which is fabricated in Woolfspeed 0.25-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> GaN-on-SiC technology. This PA is the first published design for the emerging IEEE 802.11ax application in the literature. When tested with 80-MHz 256-quadratic-amplitude modulation 802.11ax signal with 11.25-dB peak-to-average power ratio, the PA delivers average output power of 27.3-30.3 dBm from 4.9 to 5.9 GHz, with power-added efficiency of 16.7% to 27.3%, while meeting the standard specification of error vector magnitude below −32 dB.
ISSN:1531-1309
1558-1764
DOI:10.1109/LMWC.2018.2811338