Temperature-dependent nitrogen configuration of N-doped graphene by chemical vapor deposition

• Published in: Carbon (New York) Vol. 81; pp. 814 - 820
• Main Authors: Sui, Yanping, Zhu, Bo, Zhang, Haoran, Shu, Haibo, Chen, Zhiying, Zhang, Yanhui, Zhang, Yaqian, Wang, Bin, Tang, Chunmiao, Xie, Xiaoming, Yu, Guanghui, Jin, Zhi, Liu, Xinyu
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.01.2015; Elsevier
• Subjects: ammonia; Chemical vapor deposition; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Density; Doping; Elongation; Exact sciences and technology; Flow rate; Fullerenes and related materials; diamonds, graphite; Graphene; Materials science; Methane; Methods of deposition of films and coatings; film growth and epitaxy; nitrogen; nitrogen content; Physics; Specific materials; temperature; vapors; X-ray photoelectron spectroscopy; CVD; Temperature dependence; Temperature effects; Graphene; Doping; Doped materials; Nitrogen additions; Nitrogen

The N-doped graphene domain is synthesized through co-growth of ammonia and methane by chemical vapor deposition (CVD). Results showed that the nitrogen concentration, defect density, and doping level increased with the decrease in growth temperature. Notably, the position of N1s main peak from X-ra...