Temperature-dependent nitrogen configuration of N-doped graphene by chemical vapor deposition

The N-doped graphene domain is synthesized through co-growth of ammonia and methane by chemical vapor deposition (CVD). Results showed that the nitrogen concentration, defect density, and doping level increased with the decrease in growth temperature. Notably, the position of N1s main peak from X-ra...

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Bibliographic Details
Published inCarbon (New York) Vol. 81; pp. 814 - 820
Main Authors Sui, Yanping, Zhu, Bo, Zhang, Haoran, Shu, Haibo, Chen, Zhiying, Zhang, Yanhui, Zhang, Yaqian, Wang, Bin, Tang, Chunmiao, Xie, Xiaoming, Yu, Guanghui, Jin, Zhi, Liu, Xinyu
Format Journal Article
LanguageEnglish
Published Kidlington Elsevier Ltd 01.01.2015
Elsevier
Subjects
ammonia
Chemical vapor deposition
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science; rheology
Density
Doping
Elongation
Exact sciences and technology
Flow rate
Fullerenes and related materials; diamonds, graphite
Graphene
Materials science
Methane
Methods of deposition of films and coatings; film growth and epitaxy
nitrogen
nitrogen content
Physics
Specific materials
temperature
vapors
X-ray photoelectron spectroscopy
CVD
Temperature dependence
Temperature effects
Graphene
Doping
Doped materials
Nitrogen additions
Nitrogen
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Summary:The N-doped graphene domain is synthesized through co-growth of ammonia and methane by chemical vapor deposition (CVD). Results showed that the nitrogen concentration, defect density, and doping level increased with the decrease in growth temperature. Notably, the position of N1s main peak from X-ray photoelectron spectroscopy (XPS) showed a significant linear blueshift as the temperature decreased, indicating that the main doping nitrogen configuration gradually evolved from pyridinic N to pyrrolic N consistent with the theoretical explanation. In addition, the nitrogen configuration was not influenced by the NH3 flow rate, which was mainly pyridinic N at the high temperature. With increasing NH3 flow rate the redshift of the Raman peak was caused by the elongation of the CC bonds. This work presented a process to control the predominant bonding configuration of doping nitrogen by mainly choosing the growth temperature through CVD.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2014.10.030