Temperature-dependent nitrogen configuration of N-doped graphene by chemical vapor deposition
The N-doped graphene domain is synthesized through co-growth of ammonia and methane by chemical vapor deposition (CVD). Results showed that the nitrogen concentration, defect density, and doping level increased with the decrease in growth temperature. Notably, the position of N1s main peak from X-ra...
Saved in:
| Published in | Carbon (New York) Vol. 81; pp. 814 - 820 |
|---|---|
| Main Authors | , , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Kidlington
Elsevier Ltd
01.01.2015
Elsevier |
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | The N-doped graphene domain is synthesized through co-growth of ammonia and methane by chemical vapor deposition (CVD). Results showed that the nitrogen concentration, defect density, and doping level increased with the decrease in growth temperature. Notably, the position of N1s main peak from X-ray photoelectron spectroscopy (XPS) showed a significant linear blueshift as the temperature decreased, indicating that the main doping nitrogen configuration gradually evolved from pyridinic N to pyrrolic N consistent with the theoretical explanation. In addition, the nitrogen configuration was not influenced by the NH3 flow rate, which was mainly pyridinic N at the high temperature. With increasing NH3 flow rate the redshift of the Raman peak was caused by the elongation of the CC bonds. This work presented a process to control the predominant bonding configuration of doping nitrogen by mainly choosing the growth temperature through CVD. |
|---|---|
| AbstractList | The N-doped graphene domain is synthesized through co-growth of ammonia and methane by chemical vapor deposition (CVD). Results showed that the nitrogen concentration, defect density, and doping level increased with the decrease in growth temperature. Notably, the position of N1s main peak from X-ray photoelectron spectroscopy (XPS) showed a significant linear blueshift as the temperature decreased, indicating that the main doping nitrogen configuration gradually evolved from pyridinic N to pyrrolic N consistent with the theoretical explanation. In addition, the nitrogen configuration was not influenced by the NH3 flow rate, which was mainly pyridinic N at the high temperature. With increasing NH3 flow rate the redshift of the Raman peak was caused by the elongation of the CC bonds. This work presented a process to control the predominant bonding configuration of doping nitrogen by mainly choosing the growth temperature through CVD. The N-doped graphene domain is synthesized through co-growth of ammonia and methane by chemical vapor deposition (CVD). Results showed that the nitrogen concentration, defect density, and doping level increased with the decrease in growth temperature. Notably, the position of N1s main peak from X-ray photoelectron spectroscopy (XPS) showed a significant linear blueshift as the temperature decreased, indicating that the main doping nitrogen configuration gradually evolved from pyridinic N to pyrrolic N consistent with the theoretical explanation. In addition, the nitrogen configuration was not influenced by the NH sub(3) flow rate, which was mainly pyridinic N at the high temperature. With increasing NH sub(3) flow rate the redshift of the Raman peak was caused by the elongation of the C-C bonds. This work presented a process to control the predominant bonding configuration of doping nitrogen by mainly choosing the growth temperature through CVD. |
| Author | Sui, Yanping Zhu, Bo Xie, Xiaoming Yu, Guanghui Zhang, Yanhui Zhang, Yaqian Jin, Zhi Wang, Bin Chen, Zhiying Tang, Chunmiao Liu, Xinyu Zhang, Haoran Shu, Haibo |
| Author_xml | – sequence: 1 givenname: Yanping surname: Sui fullname: Sui, Yanping organization: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China – sequence: 2 givenname: Bo surname: Zhu fullname: Zhu, Bo organization: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China – sequence: 3 givenname: Haoran surname: Zhang fullname: Zhang, Haoran organization: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China – sequence: 4 givenname: Haibo surname: Shu fullname: Shu, Haibo organization: College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China – sequence: 5 givenname: Zhiying surname: Chen fullname: Chen, Zhiying organization: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China – sequence: 6 givenname: Yanhui surname: Zhang fullname: Zhang, Yanhui organization: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China – sequence: 7 givenname: Yaqian surname: Zhang fullname: Zhang, Yaqian organization: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China – sequence: 8 givenname: Bin surname: Wang fullname: Wang, Bin organization: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China – sequence: 9 givenname: Chunmiao surname: Tang fullname: Tang, Chunmiao organization: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China – sequence: 10 givenname: Xiaoming surname: Xie fullname: Xie, Xiaoming organization: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China – sequence: 11 givenname: Guanghui surname: Yu fullname: Yu, Guanghui email: ghyu@mail.sim.ac.cn organization: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China – sequence: 12 givenname: Zhi surname: Jin fullname: Jin, Zhi organization: Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, 100029 Beijing, China – sequence: 13 givenname: Xinyu surname: Liu fullname: Liu, Xinyu organization: Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, 100029 Beijing, China |
| BackLink | http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28928705$$DView record in Pascal Francis |
| BookMark | eNqFkUFv3CAQhVGUSNkk_Qc9cKnUi50BjJftoVIVpW2kqLkkxwhhGG9YecEF70r774uz6aWH5gSM3vfEvHdBTkMMSMhHBjUD1l5vamtSF0PNgTVlVIOAE7JgaikqoVbslCwAQFUt5-KcXOS8Kc9GsWZBnh9xO2Iy0y5h5XDE4DBMNPgpxTUGamPo_XpXBD4GGnv6q3JxREfXyYwvGJB2B2pfcOutGejejDHRYhOzn4ErctabIeOHt_OSPH2_fbz5Wd0__Li7-XZf2Qb4VLEWyhpOle9JAYJxlE6ZpQHJTC-kER2ibB3vJEgU2IlmqZxR0JdbbxHFJfl89B1T_L3DPOmtzxaHwQSMu6x5iUlwWHH5rpS1kjWNFKwt0k9vUpPLdn0ywfqsx-S3Jh00VyuuljBbfjnqbIo5J-y19dNrYFMyftAM9FyT3uhjTXquaZ6Wmgrc_AP_9X8H-3rEsMS695h0th6DRecT2km76P9v8AdG27C1 |
| CODEN | CRBNAH |
| CitedBy_id | crossref_primary_10_1021_acs_nanolett_4c04053 crossref_primary_10_1039_C6CC08776K crossref_primary_10_1016_j_susc_2015_08_038 crossref_primary_10_1002_celc_201600130 crossref_primary_10_1007_s10904_018_0853_4 crossref_primary_10_1021_acs_chemmater_5b04654 crossref_primary_10_1016_j_diamond_2022_109115 crossref_primary_10_1007_s11581_024_06020_3 crossref_primary_10_1007_s10853_016_0250_8 crossref_primary_10_1016_j_cej_2025_159918 crossref_primary_10_3390_chemosensors11060334 crossref_primary_10_1002_jctb_6147 crossref_primary_10_1016_j_diamond_2023_109686 crossref_primary_10_1007_s10854_019_02740_9 crossref_primary_10_1016_j_apsusc_2019_03_349 crossref_primary_10_3390_ma13051173 crossref_primary_10_1016_j_mattod_2020_04_010 crossref_primary_10_1149_1945_7111_accab0 crossref_primary_10_1021_acs_energyfuels_2c03517 crossref_primary_10_1039_D1EN01188J crossref_primary_10_1002_smll_202302795 crossref_primary_10_1007_s10854_023_10194_3 crossref_primary_10_1021_acsami_7b00067 crossref_primary_10_1088_1361_6463_adb6b6 crossref_primary_10_1007_s10934_022_01421_z crossref_primary_10_1016_j_scitotenv_2021_146665 crossref_primary_10_1515_psr_2016_0107 crossref_primary_10_1016_j_materresbull_2022_111943 crossref_primary_10_12677_NAT_2019_91003 crossref_primary_10_1016_j_apsusc_2018_05_132 crossref_primary_10_1039_D1TA02446A crossref_primary_10_1039_C6MH00358C crossref_primary_10_3390_nano7100302 crossref_primary_10_1002_pssr_202400165 crossref_primary_10_1016_j_carbon_2020_02_065 crossref_primary_10_31857_S0453881123040093 crossref_primary_10_1039_D3MA01006F crossref_primary_10_1021_acs_chemrev_8b00501 crossref_primary_10_1134_S0023158423040080 crossref_primary_10_1080_10408436_2021_1965954 crossref_primary_10_1002_admi_202100943 crossref_primary_10_3390_nano10112286 crossref_primary_10_1021_acsomega_1c01520 crossref_primary_10_1016_j_jece_2022_107873 crossref_primary_10_1063_5_0197184 crossref_primary_10_1016_j_apmt_2022_101541 crossref_primary_10_1039_C9TA01768B crossref_primary_10_3390_nano9030425 crossref_primary_10_1002_aelm_202000253 crossref_primary_10_1016_j_physb_2024_416859 |
| Cites_doi | 10.1038/nmat2296 10.1126/science.1252268 10.1038/nmat1967 10.1038/nphoton.2011.318 10.1021/nn800459e 10.1088/0957-4484/20/44/445502 10.1021/cs200652y 10.1021/nl051779j 10.1002/smll.200801711 10.1016/j.pmatsci.2011.03.003 10.1021/ja960338m 10.1021/nl803279t 10.1039/C4TA01047G 10.1021/nn900130g 10.1166/jnn.2005.304 10.1016/j.carbon.2013.04.065 10.1038/srep00586 10.1002/(SICI)1521-4095(199906)11:8<655::AID-ADMA655>3.0.CO;2-6 10.1038/nnano.2008.67 10.1103/PhysRevLett.101.026803 10.1063/1.122907 10.1021/jp050123b 10.1002/adma.201004110 10.1016/j.matlet.2013.01.024 10.1021/nl0714177 |
| ContentType | Journal Article |
| Copyright | 2014 Elsevier Ltd 2015 INIST-CNRS |
| Copyright_xml | – notice: 2014 Elsevier Ltd – notice: 2015 INIST-CNRS |
| DBID | AAYXX CITATION IQODW 7SR 7U5 8FD JG9 L7M 7S9 L.6 |
| DOI | 10.1016/j.carbon.2014.10.030 |
| DatabaseName | CrossRef Pascal-Francis Engineered Materials Abstracts Solid State and Superconductivity Abstracts Technology Research Database Materials Research Database Advanced Technologies Database with Aerospace AGRICOLA AGRICOLA - Academic |
| DatabaseTitle | CrossRef Materials Research Database Engineered Materials Abstracts Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace AGRICOLA AGRICOLA - Academic |
| DatabaseTitleList | AGRICOLA Materials Research Database |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Chemistry Physics |
| EISSN | 1873-3891 |
| EndPage | 820 |
| ExternalDocumentID | 28928705 10_1016_j_carbon_2014_10_030 S0008622314009920 |
| GroupedDBID | --K --M -~X .~1 0R~ 1B1 1~. 1~5 29B 4.4 457 4G. 5GY 5VS 7-5 71M 8P~ 9JN AABNK AABXZ AACTN AAEDT AAEDW AAEPC AAHCO AAIAV AAIKJ AAKOC AALRI AAOAW AAQFI AAQXK AARJD AAXUO ABFNM ABMAC ABXDB ABXRA ABYKQ ACDAQ ACGFS ACIWK ACNNM ACRLP ADBBV ADEZE ADMUD AEBSH AEKER AENEX AEZYN AFKWA AFRZQ AFTJW AGHFR AGUBO AGYEJ AHHHB AHIDL AIEXJ AIKHN AITUG AJBFU AJOXV ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ ASPBG AVWKF AXJTR AZFZN BELTK BKOJK BLXMC CS3 DU5 EBS EFJIC EFLBG EJD EO8 EO9 EP2 EP3 F5P FDB FEDTE FGOYB FIRID FNPLU FYGXN G-2 G-Q GBLVA HVGLF HZ~ IHE J1W JARJE KOM M24 M41 MAGPM MO0 N9A O-L O9- OAUVE OZT P-8 P-9 P2P PC. Q38 R2- RIG RNS ROL RPZ SDF SDG SDP SES SEW SMS SPC SPCBC SSM SSR SSZ T5K TWZ WUQ XPP ZMT ~02 ~G- AAHBH AATTM AAXKI AAYWO AAYXX ABJNI ABWVN ACRPL ACVFH ADCNI ADNMO AEIPS AEUPX AFJKZ AFPUW AFXIZ AGCQF AGQPQ AGRNS AIGII AIIUN AKBMS AKRWK AKYEP ANKPU APXCP BNPGV CITATION SSH IQODW 7SR 7U5 8FD EFKBS JG9 L7M 7S9 L.6 |
| ID | FETCH-LOGICAL-c402t-160016d8223530312e5d8a7a051af35a3bee56d2b505e3eb3478da80fb34fcee3 |
| IEDL.DBID | .~1 |
| ISSN | 0008-6223 |
| IngestDate | Fri Jul 11 14:31:49 EDT 2025 Mon Jul 21 09:24:55 EDT 2025 Wed Apr 02 07:15:17 EDT 2025 Tue Jul 01 01:14:38 EDT 2025 Thu Apr 24 23:12:05 EDT 2025 Fri Feb 23 02:24:35 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Keywords | CVD Temperature dependence Temperature effects Graphene Doping Doped materials Nitrogen additions Nitrogen |
| Language | English |
| License | CC BY 4.0 |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c402t-160016d8223530312e5d8a7a051af35a3bee56d2b505e3eb3478da80fb34fcee3 |
| Notes | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
| PQID | 1651445316 |
| PQPubID | 23500 |
| PageCount | 7 |
| ParticipantIDs | proquest_miscellaneous_2101320925 proquest_miscellaneous_1651445316 pascalfrancis_primary_28928705 crossref_citationtrail_10_1016_j_carbon_2014_10_030 crossref_primary_10_1016_j_carbon_2014_10_030 elsevier_sciencedirect_doi_10_1016_j_carbon_2014_10_030 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | January 2015 2015-01-00 2015 20150101 |
| PublicationDateYYYYMMDD | 2015-01-01 |
| PublicationDate_xml | – month: 01 year: 2015 text: January 2015 |
| PublicationDecade | 2010 |
| PublicationPlace | Kidlington |
| PublicationPlace_xml | – name: Kidlington |
| PublicationTitle | Carbon (New York) |
| PublicationYear | 2015 |
| Publisher | Elsevier Ltd Elsevier |
| Publisher_xml | – name: Elsevier Ltd – name: Elsevier |
| References | Lee, Lee, Joo, Jang, Kim, Lim (b0020) 2014; 344 Yang, Hou, Unno, Yamauchi, Saito, Kyotani (b0135) 2005; 5 Terasawa, Saiki (b0095) 2012 Zhang, Fu, Liu, Liu, Wang, Liu (b0085) 2011; 23 Terrones, Redlich, Grobert, Trasobares, Hsu, Terrones (b0110) 1999; 11 Wang, Maiyalagan, Wang (b0115) 2012; 2 Casanovas, Ricart, Rubio, Illas, Jiménez-Mateos (b0045) 1996; 118 Liu, Webster, Carroll (b0100) 2005; 109 Schedin, Geim, Morozov, Hill, Blake, Katsnelson (b0025) 2007; 6 Giovannetti, Khomyakov, Brocks, Karpan, van den Brink, Kelly (b0030) 2008; 101 Lu, Ocola, Chen (b0015) 2009; 20 Singh, Joung, Zhai, Das, Khondaker, Seal (b0060) 2011; 56 Maciel, Anderson, Pimenta, Hartschuh, Qian, Terrones (b0125) 2008; 7 Dong, Fu, Fang, Shi, Chen, Li (b0035) 2009; 5 Ewels, Glerup (b0040) 2005; 5 Das, Pisana, Chakraborty, Piscanec, Saha, Waghmare (b0120) 2008; 3 Chang, Choi, Filer, Baek (b0010) 2014; 2 Zhang, Gu, Iijima (b0105) 1998; 73 Wei, Liu, Wang, Zhang, Huang, Yu (b0090) 2009; 9 Zafar, Ni, Wu, Shi, Nan, Bai (b0075) 2013; 61 Jung, Pelton, Piner, Dikin, Stankovich, Watcharotone (b0055) 2007; 7 Ni, Yu, Luo, Wang, Liu, Wong (b0065) 2009; 3 Venezuela, Lazzeri, Mauri (b0070) 2011 Zhang, Chen, Wang, Wu, Jin, Liu (b0050) 2013; 96 Lv, Li, Botello-Méndez, Hayashi, Wang, Berkdemir (b0080) 2012; 2 Ni, Yu, Lu, Wang, Feng, Shen (b0130) 2008; 2 Han, Lee, Choi, Woo, Bae, Hong (b0005) 2012; 6 Zhang (10.1016/j.carbon.2014.10.030_b0105) 1998; 73 Ni (10.1016/j.carbon.2014.10.030_b0130) 2008; 2 Terrones (10.1016/j.carbon.2014.10.030_b0110) 1999; 11 Chang (10.1016/j.carbon.2014.10.030_b0010) 2014; 2 Zafar (10.1016/j.carbon.2014.10.030_b0075) 2013; 61 Wang (10.1016/j.carbon.2014.10.030_b0115) 2012; 2 Liu (10.1016/j.carbon.2014.10.030_b0100) 2005; 109 Terasawa (10.1016/j.carbon.2014.10.030_b0095) 2012 Ni (10.1016/j.carbon.2014.10.030_b0065) 2009; 3 Lu (10.1016/j.carbon.2014.10.030_b0015) 2009; 20 Singh (10.1016/j.carbon.2014.10.030_b0060) 2011; 56 Schedin (10.1016/j.carbon.2014.10.030_b0025) 2007; 6 Maciel (10.1016/j.carbon.2014.10.030_b0125) 2008; 7 Lee (10.1016/j.carbon.2014.10.030_b0020) 2014; 344 Yang (10.1016/j.carbon.2014.10.030_b0135) 2005; 5 Das (10.1016/j.carbon.2014.10.030_b0120) 2008; 3 Wei (10.1016/j.carbon.2014.10.030_b0090) 2009; 9 Zhang (10.1016/j.carbon.2014.10.030_b0050) 2013; 96 Venezuela (10.1016/j.carbon.2014.10.030_b0070) 2011 Han (10.1016/j.carbon.2014.10.030_b0005) 2012; 6 Casanovas (10.1016/j.carbon.2014.10.030_b0045) 1996; 118 Lv (10.1016/j.carbon.2014.10.030_b0080) 2012; 2 Zhang (10.1016/j.carbon.2014.10.030_b0085) 2011; 23 Giovannetti (10.1016/j.carbon.2014.10.030_b0030) 2008; 101 Dong (10.1016/j.carbon.2014.10.030_b0035) 2009; 5 Jung (10.1016/j.carbon.2014.10.030_b0055) 2007; 7 Ewels (10.1016/j.carbon.2014.10.030_b0040) 2005; 5 |
| References_xml | – volume: 2 start-page: 2301 year: 2008 end-page: 2305 ident: b0130 article-title: Uniaxial strain on graphene: Raman spectroscopy study and bandgap opening publication-title: ACS Nano – volume: 11 start-page: 655 year: 1999 end-page: 658 ident: b0110 article-title: Carbon nitride nanocomposites: formation of aligned C publication-title: Adv Mater – volume: 2 start-page: 12136 year: 2014 end-page: 12149 ident: b0010 article-title: Graphene in photovoltaic applications: organic photovoltaic cells (OPVs) and dye-sensitized solar cells (DSSCs) publication-title: J Mater Chem A – start-page: 51 year: 2012 ident: b0095 article-title: Synthesis of nitrogen-doped graphene by plasma-enhanced chemical vapor deposition publication-title: Jpn J Appl Phys – volume: 118 start-page: 8071 year: 1996 end-page: 8076 ident: b0045 article-title: Origin of the large N 1s binding energy in X-ray photoelectron spectra of calcined carbonaceous materials publication-title: J Am Chem Soc – volume: 3 start-page: 569 year: 2009 end-page: 574 ident: b0065 article-title: Probing charged impurities in suspended graphene using Raman spectroscopy publication-title: ACS Nano – volume: 2 start-page: 781 year: 2012 end-page: 794 ident: b0115 article-title: Review on recent progress in nitrogen-doped graphene: synthesis, characterization, and its potential applications publication-title: ACS Catal – volume: 2 start-page: 586 year: 2012 ident: b0080 article-title: Nitrogen-doped graphene: beyond single substitution and enhanced molecular sensing publication-title: Sci Rep – volume: 73 start-page: 3827 year: 1998 end-page: 3829 ident: b0105 article-title: Single-wall carbon nanotubes synthesized by laser ablation in a nitrogen atmosphere publication-title: Appl Phys Lett – volume: 6 start-page: 652 year: 2007 end-page: 655 ident: b0025 article-title: Detection of individual gas molecules adsorbed on graphene publication-title: Nat Mater – volume: 5 start-page: 2465 year: 2005 end-page: 2469 ident: b0135 article-title: Dual Raman features of double coaxial carbon nanotubes with N-doped and B-doped multiwalls publication-title: Nano Lett – volume: 109 start-page: 15769 year: 2005 end-page: 15774 ident: b0100 article-title: Temperature and flow rate of NH publication-title: J Phys Chem B – volume: 3 start-page: 210 year: 2008 end-page: 215 ident: b0120 article-title: Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor publication-title: Nat Nanotechnol – volume: 5 start-page: 1345 year: 2005 end-page: 1363 ident: b0040 article-title: Nitrogen doping in carbon nanotubes publication-title: J Nanosci Nanotechnol – start-page: 84 year: 2011 ident: b0070 article-title: Theory of double-resonant Raman spectra in graphene: intensity and line shape of defect-induced and two-phonon bands publication-title: Phys Rev B – volume: 23 start-page: 1020 year: 2011 end-page: 1024 ident: b0085 article-title: Synthesis of nitrogen-doped graphene using embedded carbon and nitrogen sources publication-title: Adv Mater – volume: 96 start-page: 149 year: 2013 end-page: 151 ident: b0050 article-title: Controllable growth of millimeter-size graphene domains on Cu foil publication-title: Mater Lett – volume: 7 start-page: 3569 year: 2007 end-page: 3575 ident: b0055 article-title: Simple approach for high-contrast optical imaging and characterization of graphene-based sheets publication-title: Nano Lett – volume: 344 start-page: 286 year: 2014 end-page: 289 ident: b0020 article-title: Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium publication-title: Science – volume: 20 year: 2009 ident: b0015 article-title: Reduced graphene oxide for room-temperature gas sensors publication-title: Nanotechnology – volume: 56 start-page: 1178 year: 2011 end-page: 1271 ident: b0060 article-title: Graphene based materials: past, present and future publication-title: Prog Mater Sci – volume: 6 start-page: 105 year: 2012 end-page: 110 ident: b0005 article-title: Extremely efficient flexible organic light-emitting diodes with modified graphene anode publication-title: Nat Photonics – volume: 5 start-page: 1422 year: 2009 end-page: 1426 ident: b0035 article-title: Doping single-layer graphene with aromatic molecules publication-title: Small – volume: 7 start-page: 878 year: 2008 end-page: 883 ident: b0125 article-title: Electron and phonon renormalization near charged defects in carbon nanotubes publication-title: Nat Mater – volume: 9 start-page: 1752 year: 2009 end-page: 1758 ident: b0090 article-title: Synthesis of N-doped graphene by chemical vapor deposition and its electrical properties publication-title: Nano Lett – volume: 61 start-page: 57 year: 2013 end-page: 62 ident: b0075 article-title: Evolution of Raman spectra in nitrogen doped graphene publication-title: Carbon – volume: 101 year: 2008 ident: b0030 article-title: Doping graphene with metal contacts publication-title: Phys Rev Lett – volume: 7 start-page: 878 year: 2008 ident: 10.1016/j.carbon.2014.10.030_b0125 article-title: Electron and phonon renormalization near charged defects in carbon nanotubes publication-title: Nat Mater doi: 10.1038/nmat2296 – volume: 344 start-page: 286 issue: 6181 year: 2014 ident: 10.1016/j.carbon.2014.10.030_b0020 article-title: Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium publication-title: Science doi: 10.1126/science.1252268 – volume: 6 start-page: 652 year: 2007 ident: 10.1016/j.carbon.2014.10.030_b0025 article-title: Detection of individual gas molecules adsorbed on graphene publication-title: Nat Mater doi: 10.1038/nmat1967 – volume: 6 start-page: 105 issue: 2 year: 2012 ident: 10.1016/j.carbon.2014.10.030_b0005 article-title: Extremely efficient flexible organic light-emitting diodes with modified graphene anode publication-title: Nat Photonics doi: 10.1038/nphoton.2011.318 – volume: 2 start-page: 2301 issue: 11 year: 2008 ident: 10.1016/j.carbon.2014.10.030_b0130 article-title: Uniaxial strain on graphene: Raman spectroscopy study and bandgap opening publication-title: ACS Nano doi: 10.1021/nn800459e – volume: 20 issue: 44 year: 2009 ident: 10.1016/j.carbon.2014.10.030_b0015 article-title: Reduced graphene oxide for room-temperature gas sensors publication-title: Nanotechnology doi: 10.1088/0957-4484/20/44/445502 – volume: 2 start-page: 781 issue: 5 year: 2012 ident: 10.1016/j.carbon.2014.10.030_b0115 article-title: Review on recent progress in nitrogen-doped graphene: synthesis, characterization, and its potential applications publication-title: ACS Catal doi: 10.1021/cs200652y – volume: 5 start-page: 2465 issue: 12 year: 2005 ident: 10.1016/j.carbon.2014.10.030_b0135 article-title: Dual Raman features of double coaxial carbon nanotubes with N-doped and B-doped multiwalls publication-title: Nano Lett doi: 10.1021/nl051779j – volume: 5 start-page: 1422 issue: 12 year: 2009 ident: 10.1016/j.carbon.2014.10.030_b0035 article-title: Doping single-layer graphene with aromatic molecules publication-title: Small doi: 10.1002/smll.200801711 – volume: 56 start-page: 1178 year: 2011 ident: 10.1016/j.carbon.2014.10.030_b0060 article-title: Graphene based materials: past, present and future publication-title: Prog Mater Sci doi: 10.1016/j.pmatsci.2011.03.003 – volume: 118 start-page: 8071 issue: 34 year: 1996 ident: 10.1016/j.carbon.2014.10.030_b0045 article-title: Origin of the large N 1s binding energy in X-ray photoelectron spectra of calcined carbonaceous materials publication-title: J Am Chem Soc doi: 10.1021/ja960338m – volume: 9 start-page: 1752 issue: 5 year: 2009 ident: 10.1016/j.carbon.2014.10.030_b0090 article-title: Synthesis of N-doped graphene by chemical vapor deposition and its electrical properties publication-title: Nano Lett doi: 10.1021/nl803279t – volume: 2 start-page: 12136 issue: 31 year: 2014 ident: 10.1016/j.carbon.2014.10.030_b0010 article-title: Graphene in photovoltaic applications: organic photovoltaic cells (OPVs) and dye-sensitized solar cells (DSSCs) publication-title: J Mater Chem A doi: 10.1039/C4TA01047G – volume: 3 start-page: 569 issue: 3 year: 2009 ident: 10.1016/j.carbon.2014.10.030_b0065 article-title: Probing charged impurities in suspended graphene using Raman spectroscopy publication-title: ACS Nano doi: 10.1021/nn900130g – volume: 5 start-page: 1345 issue: 9 year: 2005 ident: 10.1016/j.carbon.2014.10.030_b0040 article-title: Nitrogen doping in carbon nanotubes publication-title: J Nanosci Nanotechnol doi: 10.1166/jnn.2005.304 – volume: 61 start-page: 57 year: 2013 ident: 10.1016/j.carbon.2014.10.030_b0075 article-title: Evolution of Raman spectra in nitrogen doped graphene publication-title: Carbon doi: 10.1016/j.carbon.2013.04.065 – volume: 2 start-page: 586 year: 2012 ident: 10.1016/j.carbon.2014.10.030_b0080 article-title: Nitrogen-doped graphene: beyond single substitution and enhanced molecular sensing publication-title: Sci Rep doi: 10.1038/srep00586 – volume: 11 start-page: 655 issue: 8 year: 1999 ident: 10.1016/j.carbon.2014.10.030_b0110 article-title: Carbon nitride nanocomposites: formation of aligned CxNy nanofibers publication-title: Adv Mater doi: 10.1002/(SICI)1521-4095(199906)11:8<655::AID-ADMA655>3.0.CO;2-6 – volume: 3 start-page: 210 year: 2008 ident: 10.1016/j.carbon.2014.10.030_b0120 article-title: Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor publication-title: Nat Nanotechnol doi: 10.1038/nnano.2008.67 – volume: 101 issue: 2 year: 2008 ident: 10.1016/j.carbon.2014.10.030_b0030 article-title: Doping graphene with metal contacts publication-title: Phys Rev Lett doi: 10.1103/PhysRevLett.101.026803 – volume: 73 start-page: 3827 issue: 26 year: 1998 ident: 10.1016/j.carbon.2014.10.030_b0105 article-title: Single-wall carbon nanotubes synthesized by laser ablation in a nitrogen atmosphere publication-title: Appl Phys Lett doi: 10.1063/1.122907 – volume: 109 start-page: 15769 issue: 33 year: 2005 ident: 10.1016/j.carbon.2014.10.030_b0100 article-title: Temperature and flow rate of NH3 effects on nitrogen content and doping environments of carbon nanotubes grown by injection CVD method publication-title: J Phys Chem B doi: 10.1021/jp050123b – start-page: 51 year: 2012 ident: 10.1016/j.carbon.2014.10.030_b0095 article-title: Synthesis of nitrogen-doped graphene by plasma-enhanced chemical vapor deposition publication-title: Jpn J Appl Phys – start-page: 84 year: 2011 ident: 10.1016/j.carbon.2014.10.030_b0070 article-title: Theory of double-resonant Raman spectra in graphene: intensity and line shape of defect-induced and two-phonon bands publication-title: Phys Rev B – volume: 23 start-page: 1020 issue: 8 year: 2011 ident: 10.1016/j.carbon.2014.10.030_b0085 article-title: Synthesis of nitrogen-doped graphene using embedded carbon and nitrogen sources publication-title: Adv Mater doi: 10.1002/adma.201004110 – volume: 96 start-page: 149 year: 2013 ident: 10.1016/j.carbon.2014.10.030_b0050 article-title: Controllable growth of millimeter-size graphene domains on Cu foil publication-title: Mater Lett doi: 10.1016/j.matlet.2013.01.024 – volume: 7 start-page: 3569 issue: 12 year: 2007 ident: 10.1016/j.carbon.2014.10.030_b0055 article-title: Simple approach for high-contrast optical imaging and characterization of graphene-based sheets publication-title: Nano Lett doi: 10.1021/nl0714177 |
| SSID | ssj0004814 |
| Score | 2.3662994 |
| Snippet | The N-doped graphene domain is synthesized through co-growth of ammonia and methane by chemical vapor deposition (CVD). Results showed that the nitrogen... |
| SourceID | proquest pascalfrancis crossref elsevier |
| SourceType | Aggregation Database Index Database Enrichment Source Publisher |
| StartPage | 814 |
| SubjectTerms | ammonia Chemical vapor deposition Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science; rheology Density Doping Elongation Exact sciences and technology Flow rate Fullerenes and related materials; diamonds, graphite Graphene Materials science Methane Methods of deposition of films and coatings; film growth and epitaxy nitrogen nitrogen content Physics Specific materials temperature vapors X-ray photoelectron spectroscopy |
| Title | Temperature-dependent nitrogen configuration of N-doped graphene by chemical vapor deposition |
| URI | https://dx.doi.org/10.1016/j.carbon.2014.10.030 https://www.proquest.com/docview/1651445316 https://www.proquest.com/docview/2101320925 |
| Volume | 81 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3dS8MwEA9jPiiI-InzY0TwtZtNk7Z7HEOZinvawBcp1yaRiaxjH4Iv_u3eNe1kqAi-lDYkbbhL7n7X3Adjl7EvbQhp7IUysp6MlcU9J_Ai_MxEoBDPkaH4MAj7I3n3qB5rrFfFwpBbZSn7nUwvpHXZ0i6p2Z6OxxTjS3Ac8YkkmCPIbpcyolXe-vhy85Cxy-9Nx_zUuwqfK3y8MpilOWVB9WWLfLzIF_pn9bQ9hTkSzbpqF98Ed6GNbnbZTgkjedfNdI_VzGSfbfaq6m0H7GloEBC7hMleVel2wXEDz3JcMxzNYDt-Xjr-89zygafzqdG8yGCNApCn7zwrswnwN0CYzvE1pYvXIRvdXA97fa8speBlaCAuPJ9wTagRDQQKlZYvjNIxRIBbEmygIEiNUaEWKQIiE6CBLaNYQ3xl8c6iHg2OWH2ST8wx42B8ENgTskxIrQT4VikwVzqEjkb81mBBRcEkK_OMU7mL16RyKHtJHN0Toju1It0bzFuNmro8G3_0jyrmJGvrJUFV8MfI5hovV59D05NOfVWDXVTMTZBpdIACE5Mv54kfIryUKLXC3_ugCU1R6R2hTv49xVO2hU_K_ek5Y_XFbGnOEfss0maxuJtso3t73x98AocdBN8 |
| linkProvider | Elsevier |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1La9wwEBYhPaRQSp90myZVoVcnkSzZzrEsCds22dMGcilibEllS1kvm91CLvnt-cayU0JbAr0YI0u2GI1mvrHmIcTHSplYUF1lhSljZiobsec0Llo1oSQLPMeG4vm0mFyYL5f2ckuMh1gYdqvsZX-S6Z207lsOe2oeLudzjvFlOA58YhjmaNjtjwy2L5cxOLj57edhqpTgm8_5ufsQP9c5eTW0qltOg6rMATt5sTP03_XTkyVdgWoxlbv4Q3J36uj0mXja40j5KU31udgKixdiZzyUb3spvs0CEHHKmJwNpW7XEjt41YJpJOzgOP--SQwg2yinmW-XwcsuhTUkoKyvZdOnE5C_CDhd4jW9j9crcXF6MhtPsr6WQtbAQlxnioFN4QEHcgutpXSwvqKSsCcp5pbyOgRbeF0DEYUcFrYpK0_VUcRdhCLNX4vtRbsIb4SkoEijJzWNNt5qUtFaCke-oGMPADcS-UBB1_SJxrnexU83eJT9cInujunOraD7SGR3o5Yp0cYD_cthcdw9hnHQBQ-M3L-3lnefg-3Jx752JD4Mi-uwaHyCQovQbq6cKoAvwWSq-Hcf2NAcln6s7dv_nuJ7sTOZnZ-5s8_Tr7viMZ7Y9NvnndherzZhD0BoXe93jH4LZqkGbQ |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Temperature-dependent+nitrogen+configuration+of+N-doped+graphene+by+chemical+vapor+deposition&rft.jtitle=Carbon+%28New+York%29&rft.au=YANPING+SUI&rft.au=BO+ZHU&rft.au=GUANGHUI+YU&rft.au=ZHI+JIN&rft.date=2015&rft.pub=Elsevier&rft.issn=0008-6223&rft.volume=81&rft.spage=814&rft.epage=820&rft_id=info:doi/10.1016%2Fj.carbon.2014.10.030&rft.externalDBID=n%2Fa&rft.externalDocID=28928705 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0008-6223&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0008-6223&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0008-6223&client=summon |