The effect of AlN buffer layer on GaN grown on (1 1 1)-oriented Si substrates by MOCVD

• Published in: Journal of crystal growth Vol. 218; no. 2; pp. 181 - 190
• Main Authors: Zamir, S, Meyler, B, Zolotoyabko, E, Salzman, J
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.09.2000; Elsevier
• Subjects: AlN buffer; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; GaN; GaN-on-Si; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; MOCVD; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; GaN-on-Si; GaN; 81.10.Bk; 81.15.Gh; MOCVD; AlN buffer; 81.05.Ea; Buffer layer; Inorganic compounds; Semiconductor materials; Gallium nitrides; Epitaxy; Crystal growth from vapors; XRD; Experimental study; Preferred orientation; Thin films; Morphology; Aluminium nitrides; SEM
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(00)00570-4

GaN films were grown by metal organic chemical vapor deposition on (1 1 1)Si substrates, using AlN as a buffer layer. The influence of the AlN buffer layer growth temperature and growth duration on the morphology and preferred orientation of GaN films was studied. Drastic enhancement of epitaxial registration was observed with increasing buffer growth temperature. A sharp transition in the growth mode occurred at 760°C. For that temperature, an optimal buffer layer growth duration was found. The use of March parameter as a figure of merit in X-ray diffraction testing of textured GaN films is proposed.