A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer

In this paper, we propose a new low turn-off loss silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) with buried variation of lateral doping (VLD) layer. The proposed device features a VLD layer inserted in the drift region, which increases the doping dose ( Q ) and gradien...

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Bibliographic Details
Published inIEEE journal of the Electron Devices Society Vol. 7; pp. 62 - 69
Main Authors Tian, Tao, Zhang, Sheng-Li, Guo, Yu-Feng, Zhang, Jun, Pan, David Z., Yang, Ke-Meng
Format Journal Article
LanguageEnglish
Published New York IEEE 2019
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Anodes
Depletion
Doping
Drift
Electric fields
Electric potential
Insulated gate bipolar transistors
Ions
Lager
lateral insulated gate bipolar transistor (LIGBT)
linear doping
Object recognition
Semiconductor devices
Silicon-on-insulator
silicon-on-insulator (SOI)
SOI (semiconductors)
Transistors
turn-off loss
Variation of lateral doping (VLD)
Voltage
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Summary:In this paper, we propose a new low turn-off loss silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) with buried variation of lateral doping (VLD) layer. The proposed device features a VLD layer inserted in the drift region, which increases the doping dose ( Q ) and gradient ( G ) compared with Uniform P-buried (UPB) SOI LIGBT. The larger capacitance effect induced by lager Q and faster depletion leads to the lower rising anode voltage and reduced storage charge in the drift region. Therefore, a considerable low turn-off loss ( E off ) can be obtained. It is worth to note that owing to reshaped electric field in the new structure, the excess carriers of the drift region could be removed more quickly. Furthermore, larger G of the VLD layer improves the tradeoff between breakdown voltage and turn-off loss. The results of 2-D simulation indicate that the E off of the proposed device can reduce by 29.4% and 69.7% at 100 A<inline-formula> <tex-math notation="LaTeX">\cdot </tex-math></inline-formula>cm −2 and 200 A<inline-formula> <tex-math notation="LaTeX">\cdot </tex-math></inline-formula>cm −2 , respectively, when compared with UPB SOI LIGBT
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2018.2877765