Electron irradiation effects on digermane adsorbed on Si(100) surfaces

• Published in: Applied surface science Vol. 108; no. 3; pp. 345 - 350
• Main Authors: Campbell, J.H, Lozano, J, Aguilera, A.F, Craig, J.H, Pannell, K.H
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.03.1997; Elsevier Science
• Subjects: Chemistry; Exact sciences and technology; General and physical chemistry; Solid-gas interface; Surface physical chemistry; Inorganic adsorbate; Gas solid desorption; Digermane; Gas solid interface; Electron beam; Irradiation; Silicon; Inorganic adsorbent; Experimental study
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(96)00680-0

The effects of electron-beam irradiation on digermane adsorbed on Si(100) at 120 K have been investigated by temperature programmed desorption (TPD). Digermane adsorbed on clean Si(100) at low exposures exhibits a single H 2 TPD peak at 800 K, which originates from the silicon monohydride state on the Si(100) surface. At higher digermane exposures, a new peak appears between 550 and 570 K, and the 800 K peak shifts to lower temperatures. The 570 K peak is believed to originate from surface germanium hydride species. At the highest digermane exposures, a molecular desorption peak appears at approximately 140 K. Electron exposure of Si(100) dosed heavily with digermane causes the molecular TPD peak at 140 K to decrease in intensity and broaden, with a concomitant increase in TPD peak intensity at 570 K, indicating that the electron beam dissociates physisorbed digermane species via deposition of GeH x species onto the Si(100) surface.