Epitaxial growth of single-crystalline AlN layer on Si(111) by DC magnetron sputtering at room temperature

The epitaxial growth of an AlN layer on a Si(111) substrate at room temperature by DC magnetron sputtering was investigated. The predeposition of a 5-nm-thick Al layer on the Si substrate before the AlN deposition was found to be crucial for the epitaxial growth of the AlN layer. The orientation rel...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 57; no. 6; pp. 60306 - 60309
Main Authors Shin, In-Su, Kim, Jongmyeong, Lee, Donghyun, Kim, Donghyun, Park, Yongjo, Yoon, Euijoon
Format Journal Article
LanguageEnglish
Published Tokyo The Japan Society of Applied Physics 01.06.2018
Japanese Journal of Applied Physics
Subjects
Aluminum nitride
Epitaxial growth
Magnetron sputtering
Orientation relationships
Room temperature
Silicon substrates
Single crystals
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Summary:The epitaxial growth of an AlN layer on a Si(111) substrate at room temperature by DC magnetron sputtering was investigated. The predeposition of a 5-nm-thick Al layer on the Si substrate before the AlN deposition was found to be crucial for the epitaxial growth of the AlN layer. The orientation relationships of AlN/Al/Si were observed to be AlN Al Si and AlN Al[011] Si, indicating the epitaxial growth of the AlN layer on the Si(111) substrate. This epitaxial growth of the AlN layer was attributed to the smaller lattice mismatches between AlN and Al and AlN and Al[011] than that between AlN and Si.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.060306