Strong quenching of dye fluorescence in monomeric perylene orange/TMDC hybrid structures

• Published in: Nanoscale advances Vol. 5; no. 12; pp. 3348 - 3356
• Main Authors: Völzer, Tim, Schubert, Alina, von der Oelsnitz, Erik, Schröer, Julian, Barke, Ingo, Schwartz, Rico, Watanabe, Kenji, Taniguchi, Takashi, Speller, Sylvia, Korn, Tobias, Lochbrunner, Stefan
• Format: Journal Article
• Language: English
• Published: England RSC 13.06.2023
• Subjects: Chemistry
• ISSN: 2516-0230; 2516-0230
• DOI: 10.1039/d3na00276d

Hybrid structures with an interface between two different materials with properly aligned energy levels facilitate photo-induced charge separation to be exploited in optoelectronic applications. Particularly, the combination of 2D transition metal dichalcogenides (TMDCs) and dye molecules offers strong light-matter interaction, tailorable band level alignments, and high fluorescence quantum yields. In this work, we aim at the charge or energy transfer-related quenching of the fluorescence of the dye perylene orange (PO) when isolated molecules are brought onto monolayer TMDCs via thermal vapor deposition. Here, micro-photoluminescence spectroscopy revealed a strong intensity drop of the PO fluorescence. For the TMDC emission, in contrast, we observed a relative growth of the trion versus exciton contribution. In addition, fluorescence imaging lifetime microscopy quantified the intensity quenching to a factor of about 10 3 and demonstrated a drastic lifetime reduction from 3 ns to values much shorter than the 100 ps width of the instrument response function. From the ratio of the intensity quenching that is attributed to hole or energy transfer from dye to semiconductor, we deduce a time constant of several picoseconds at most, pointing to an efficient charge separation suitable for optoelectronic devices. Hybrid structures of TMDCs and monomers of the perylene diimide dye perylene orange (PO) exhibit charge transfer after optical excitation. This results in drastic PO fluorescence quenching and may be exploited in optoelectronic devices.