High purity LPE growth of InGaAs by adding Al to melt

InGaAs crystal films lattice matched to InP were grown by LPE process by adding a small amount of Al to the In-Ga-As ternary melt. InGaAs epilayers grown with the addition of Al have a low carrier concentration and a high Hall mobility without long baking times and with no influence on the InGaAs co...

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Bibliographic Details
Published inJournal of crystal growth Vol. 64; no. 3; pp. 433 - 440
Main Authors Kondo, Susumu, Amano, Toshimasa, Nagai, Haruo
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.12.1983
Elsevier
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Crystal growth
Gallium Indium Arsenides Mixed
Impurity
Hall mobility
Epitaxy
Secondary ion mass spectrometry
Experimental study
Inorganic compound
Thin film
Chemical composition
Charge carrier concentration
Growth from solution
High purity
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Summary:InGaAs crystal films lattice matched to InP were grown by LPE process by adding a small amount of Al to the In-Ga-As ternary melt. InGaAs epilayers grown with the addition of Al have a low carrier concentration and a high Hall mobility without long baking times and with no influence on the InGaAs composition. Thermodynamic calculations explained the results for the Al behaviour in the LPE growth process.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(83)90326-3