Small angle X-ray scattering from microvoids in the a-SiC:H alloy

• Published in: IEEE transactions on electron devices Vol. 36; no. 12; pp. 2859 - 2862
• Main Authors: Mahan, A.H., Nelson, B.P., Crandall, R.S., Williamson, D.L.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.12.1989; Institute of Electrical and Electronics Engineers
• Subjects: Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Density measurement; Exact sciences and technology; Glow discharges; Microstructure; Optical films; Optical materials; Optical scattering; Photoconducting materials; Photoconductivity; Physics; Radio frequency; Structure of solids and liquids; crystallography; X-ray scattering; Semiconductor materials; Silicon Carbides; Vacuum; Impurity; Hydrogen; Glow discharge; Microdefect; Amorphous state; Small angle X ray scattering; Crystal defect; Experimental study; Inorganic compound
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.40947

Small-angle X-ray scattering (SAXS) measurements on a series of a-SiC:H alloy films deposited in a glow discharge reactor using SiH/sub 4//CH/sub 4/ gas mixtures are discussed. It was found that the introduction of C into the a-Si matrix produces a large SAXS signal, which suggests a sizable microvoid density, and which further increases with increasing C content. A Guinier analysis shows that these microvoids are spherical and have an average radius of approximately 6 AA, which increases only slightly with C content. Other measurements (infrared, photoconductivity, film density, optical) made on identically prepared material are included to identify the possible origins of these microvoids and to determine how they affect material quality.< >