Crystal growth of gallium nitride in supercritical ammonia

Single crystals of gallium nitride were grown in supercritical ammonia at 400°C and 2.4 kbar. Solubilization of the GaN feedstock was accomplished through the use of a mineralizer which is a mixture of KNH 2 and KI. Two different crystal morophologies were obtained; rods and hexagonal plates. In bot...

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Bibliographic Details
Published inJournal of crystal growth Vol. 222; no. 3; pp. 431 - 434
Main Authors Ketchum, Douglas R., Kolis, Joseph W.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 2001
Elsevier
Subjects
Ammonothermal synthesis
Cross-disciplinary physics: materials science; rheology
Crystal growth
Exact sciences and technology
Gallium nitride
GaN
Growth from vapor
Materials science
Methods of crystal growth; physics of crystal growth
Physics
Crystal growth
GaN
Gallium nitride
Ammonothermal synthesis
Inorganic compounds
Crystal form
Semiconductor materials
Gallium nitrides
Mineralizing agent
Supercritical state
Experimental study
Nitrides
Ammonia
Monocrystals
Crystal growth habit
Ammonolysis
III-V semiconductors
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Summary:Single crystals of gallium nitride were grown in supercritical ammonia at 400°C and 2.4 kbar. Solubilization of the GaN feedstock was accomplished through the use of a mineralizer which is a mixture of KNH 2 and KI. Two different crystal morophologies were obtained; rods and hexagonal plates. In both cases, plate growth occurs mainly perpendicular to the hexagonal axis. Although the largest crystals (0.5×0.2×0.1 mm 3) isolated thus far are smaller than those obtained by high nitrogen pressure methods, supercritical ammonia holds the potential to be the low-temperature rival of the current methods.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(00)00853-8