The stress and strain in cubic films on (1 1 3), emphasizing Ge on Si(1 1 3)

• Published in: Journal of crystal growth Vol. 225; no. 1; pp. 16 - 22
• Main Authors: Bottomley, D.J, Omi, H, Ogino, T
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.2001; Elsevier
• Subjects: A1. Growth models; A1. Nanostructures; A1. Stresses; A3. Molecular beam epitaxy; B2. Semiconducting germanium; B2. Semiconducting silicon; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Nanoscale materials and structures: fabrication and characterization; Physics; 78.66.Db; B2. Semiconducting germanium; 68.55.−a; A1. Growth models; A3. Molecular beam epitaxy; A1. Nanostructures; A1. Stresses; 81.15.Aa; 81.40.Jj; B2. Semiconducting silicon; Cubic lattices; Epitaxial layers; Semiconductor materials; Theoretical study; Nanostructures; Thin films; Crystal growth habit; Strains; Nonmetals; Morphology; Strained layer; Molecular beam epitaxy; Stress effects; Germanium; Silicon
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(01)01016-8

We derive analytical expressions for the non-zero stress and strain tensor elements of cubic epitaxial films on (1 1 3) surfaces. We have evaluated these expressions for systems with the greatest immediate future technological promise, emphasizing Ge on Si(1 1 3). In this case there are compressive stresses along [3 3 2 ̄ ] and [ 1 ̄ 1 0] of 6.29 and 5.77 GPa, respectively. Comparing with previous experimental work, we conclude that the Ge nanowire growth morphology on Si(1 1 3) elongated along [3 3 2 ̄ ] is not caused by film stress and strain effects. Taking other theoretical work into consideration leads to the conclusion that in this case the nanostructure elongation direction arises from the anisotropic surface stress properties of the surface monolayer, including the heteroepitaxial components.