Measurement of minority carrier lifetime profiles in silicon

• Published in: Solid-state electronics Vol. 20; no. 2; pp. 91 - 94
• Main Authors: Schwab, G., Bernt, H., Reichl, H.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.02.1977

The influence of finite surface recombination velocity on the measurement of minority carrier lifetime has been studied. The method is based on measuring the phase shift between the a.c.-photocurrent of a Schottky contact and the incident light. The limit of spatial resolution has been shown by theo...