Measurement of minority carrier lifetime profiles in silicon

The influence of finite surface recombination velocity on the measurement of minority carrier lifetime has been studied. The method is based on measuring the phase shift between the a.c.-photocurrent of a Schottky contact and the incident light. The limit of spatial resolution has been shown by theo...

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Bibliographic Details
Published inSolid-state electronics Vol. 20; no. 2; pp. 91 - 94
Main Authors Schwab, G., Bernt, H., Reichl, H.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.02.1977
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Summary:The influence of finite surface recombination velocity on the measurement of minority carrier lifetime has been studied. The method is based on measuring the phase shift between the a.c.-photocurrent of a Schottky contact and the incident light. The limit of spatial resolution has been shown by theoretical calculations to be about one diffusion length. Lifetime profiles have been measured by the use of a mercury capillary contact.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(77)90055-7