A monolithically integrated torsional CMOS-MEMS relay

We report experimental demonstrations of a torsional microelectromechanical (MEM) relay fabricated using the CMOS-MEMS approach (or intra-CMOS) which exploits the full foundry inherent characteristics enabling drastic reduction of the fabrication costs and batch production. In particular, the relay...

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Bibliographic Details
Published inJournal of micromechanics and microengineering Vol. 26; no. 11; pp. 115012 - 115020
Main Authors Riverola, M, Sobreviela, G, Torres, F, Uranga, A, Barniol, N
Format Journal Article
LanguageEnglish
Published IOP Publishing 05.10.2016
Subjects
CMOS-MEMS
CMOS-VIA's
MEMS
monolithic integration
relays
switches
titanium nitride
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Summary:We report experimental demonstrations of a torsional microelectromechanical (MEM) relay fabricated using the CMOS-MEMS approach (or intra-CMOS) which exploits the full foundry inherent characteristics enabling drastic reduction of the fabrication costs and batch production. In particular, the relay is monolithically integrated in the back end of line of a commercial standard CMOS technology (AMS 0.35 μm) and released by means of a simple one-step mask-less wet etching. The fabricated torsional relay exhibits an extremely steep switching behaviour symmetrical about both contact sides with an on-state contact resistance in the kΩ-range throughout the on-off cycling test.
Bibliography:JMM-102329.R1
ISSN:0960-1317
1361-6439
DOI:10.1088/0960-1317/26/11/115012