Detailed analysis of secondary ions' effect for the calculation of neutron-induced SER in SRAMs

A new method of neutron soft error rate calculation derived from device simulations and nuclear physics results is presented. The main inputs are only a critical linear energy transfer, a critical charge, and layout dimensions. No classical sensitive volume size is needed because the extension of th...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 48; no. 6; pp. 1953 - 1959
Main Authors Hubert, G., Palau, J.-M., Castellani-Coulie, K., Calvet, M.-C., Fourtine, S.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2001
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Institute of Electrical and Electronics Engineers
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Summary:A new method of neutron soft error rate calculation derived from device simulations and nuclear physics results is presented. The main inputs are only a critical linear energy transfer, a critical charge, and layout dimensions. No classical sensitive volume size is needed because the extension of the sensitive region is described in terms of the variation of the ion efficacy versus its position with respect to the sensitive drain.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9499
1558-1578
DOI:10.1109/23.983156