Detailed analysis of secondary ions' effect for the calculation of neutron-induced SER in SRAMs
A new method of neutron soft error rate calculation derived from device simulations and nuclear physics results is presented. The main inputs are only a critical linear energy transfer, a critical charge, and layout dimensions. No classical sensitive volume size is needed because the extension of th...
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Published in | IEEE transactions on nuclear science Vol. 48; no. 6; pp. 1953 - 1959 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.12.2001
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Institute of Electrical and Electronics Engineers |
Subjects | |
Online Access | Get full text |
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Summary: | A new method of neutron soft error rate calculation derived from device simulations and nuclear physics results is presented. The main inputs are only a critical linear energy transfer, a critical charge, and layout dimensions. No classical sensitive volume size is needed because the extension of the sensitive region is described in terms of the variation of the ion efficacy versus its position with respect to the sensitive drain. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0018-9499 1558-1578 |
DOI: | 10.1109/23.983156 |