Ordering-induced electron accumulation at GaInP/GaAs hetero-interfaces

• Published in: Journal of crystal growth Vol. 221; no. 1; pp. 515 - 519
• Main Authors: Tanaka, Takeshi, Takano, Kazuto, Tsuchiya, Tadayoshi, Sakaguchi, Harunori
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.12.2000; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Disorder; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Exact sciences and technology; GaInP; Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Iii-v semiconductors; InGaP; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Order; Physics; Polarization; Vapor phase epitaxy; growth from vapor phase; Order; Polarization; 81.15.Gh; GaInP; Disorder; InGaP; Gallium arsenides; Inorganic compounds; Semiconductor materials; Ternary compounds; Long-range order; Photoluminescence; Binary compounds; Order parameters; Solid-solid interfaces; Experimental study; Gallium phosphides; Buildup; Indium phosphides; MOVPE method; Heterojunctions
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(00)00754-5

Hetero-junctions between GaAs and GaInP were investigated, which had been grown by metal organic vapor-phase epitaxy (MOVPE) at a wide range of temperatures such that the GaInP had different long-range-order parameter ( η) values. Electron depth-profiles in the samples were characterized by capacitance–voltage ( C– V) measurement, and delta-shaped electron accumulation was observed at the interface between GaAs and GaInP, although both layers were grown undoped. It has been proven that the sheet concentration of this unexpected electron accumulation is strongly dependent on the η value of GaInP. Macroscopic polarization, caused by spontaneously polarized gallium-rich clusters in ordered GaInP, is attributed as being the reason for this electron accumulation.