Study on effective MOSFET channel length extracted from gate capacitance

The effective channel length (LGCM) of metal-oxide-semiconductor field-effect transistors (MOSFETs) is extracted from the gate capacitances of actual-size MOSFETs, which are measured by charge-injection-induced-error-free charge-based capacitance measurement (CIEF CBCM). To accurately evaluate the c...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 57; no. 1; pp. 16601 - 16607
Main Authors Tsuji, Katsuhiro, Terada, Kazuo, Fujisaka, Hisato
Format Journal Article
LanguageEnglish
Published Tokyo The Japan Society of Applied Physics 01.01.2018
Japanese Journal of Applied Physics
Subjects
Capacitance
Charge injection
Error analysis
Field effect transistors
MOSFETs
Semiconductor devices
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Summary:The effective channel length (LGCM) of metal-oxide-semiconductor field-effect transistors (MOSFETs) is extracted from the gate capacitances of actual-size MOSFETs, which are measured by charge-injection-induced-error-free charge-based capacitance measurement (CIEF CBCM). To accurately evaluate the capacitances between the gate and the channel of test MOSFETs, the parasitic capacitances are removed by using test MOSFETs having various channel sizes and a source/drain reference device. A strong linear relationship between the gate-channel capacitance and the design channel length is obtained, from which LGCM is extracted. It is found that LGCM is slightly less than the effective channel length (LCRM) extracted from the measured MOSFET drain current. The reason for this is discussed, and it is found that the capacitance between the gate electrode and the source and drain regions affects this extraction.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.016601