Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN

• Published in: Scripta materialia Vol. 66; no. 6; pp. 351 - 354
• Main Authors: Morales, F.M., Carvalho, D., Ben, T., García, R., Molina, S.I., Martí, A., Luque, A., Staddon, C.R., Campion, R.P., Foxon, C.T.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.03.2012
• Subjects: Alloying; Arsenides; Compound semiconductors (InGaAsN); Dilute arsenide; Dopants; Gallium arsenide; Indium gallium nitrides; Manganese; Segregations; Transformations; Transmission electron microscopy (TEM); X-ray diffraction (XRD); Dilute arsenide; X-ray diffraction (XRD); Compound semiconductors (InGaAsN); Transmission electron microscopy (TEM)
• ISSN: 1359-6462; 1872-8456
• DOI: 10.1016/j.scriptamat.2011.11.025

Arsenic alloying is observed for epitaxial layers nominally intended to be In 0.75Ga 0.25N. Voids form beneath their interfaces with GaAs substrates, acting as sources of Ga + As out-diffusion into the growing epilayers. As a result, heteroepitaxial single-phase quaternary In x Ga 1− x As y N 1− y films are formed with x ∼ 0.55 and 0.05 < y < 0.10. While an undoped epilayer retains the wurtzite structure, a Mn-doped sample showed randomly spaced dopant segregations, which, together with a slightly higher As concentration, led to a transformation from the hexagonal to the twinned cubic phase.