β-Ga2O3 material properties, growth technologies, and devices: a review

Rapid progress in β -gallium oxide ( β -Ga 2 O 3 ) material and device technologies has been made in this decade, and its superior material properties based on the very large bandgap of over 4.5 eV have been attracting much attention. β -Ga 2 O 3 appears particularly promising for power switching de...

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Bibliographic Details
Published inAAPPS bulletin Vol. 32; no. 1; pp. 1 - 14
Main Author Higashiwaki, Masataka
Format Journal Article
LanguageEnglish
Published Singapore Springer Singapore 17.01.2022
Springer
Subjects
Astronomy
Astrophysics and Cosmology
Atomic
Gallium oxide (Ga2O3)
Molecular
Optical and Plasma Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Review Article
Gallium oxide (Ga
)
O
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Summary:Rapid progress in β -gallium oxide ( β -Ga 2 O 3 ) material and device technologies has been made in this decade, and its superior material properties based on the very large bandgap of over 4.5 eV have been attracting much attention. β -Ga 2 O 3 appears particularly promising for power switching device applications because of its extremely large breakdown electric field and availability of large-diameter, high-quality wafers manufactured from melt-grown bulk single crystals. In this review, after introducing material properties of β -Ga 2 O 3 that are important for electronic devices, current status of bulk melt growth, epitaxial thin-film growth, and device processing technologies are introduced. Then, state-of-the-art β -Ga 2 O 3 Schottky barrier diodes and field-effect transistors are discussed, mainly focusing on development results of the author’s group.
ISSN:2309-4710
2309-4710
DOI:10.1007/s43673-021-00033-0