Local vibrational modes of hydrogen in GaN: Observation and theory
Gallium nitride (GaN) single crystals were implanted with protons (deuterons) at temperatures below 20 K and studied by infrared absorption spectroscopy at 8 K without any intermediate heating of the samples. A strong absorption line was observed at 1456 cm - 1 after proton implantation. The anneali...
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Published in | Physica. B, Condensed matter Vol. 376; pp. 464 - 467 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.04.2006
|
Subjects | |
Online Access | Get full text |
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Summary: | Gallium nitride (GaN) single crystals were implanted with protons (deuterons) at temperatures below 20
K and studied by infrared absorption spectroscopy at 8
K without any intermediate heating of the samples. A strong absorption line was observed at
1456
cm
-
1
after proton implantation. The annealing of the
1456
-
cm
-
1
line at about 225
K is correlated with the appearance of two absorption lines at 3027 and
3139
cm
-
1
, which were shown previously to represent N–H stretch modes of
V
Ga
-H defects in GaN. The observation of the
1456
-
cm
-
1
line after low-temperature implantation, together with the observation of a correlated annealing for the
1456
-
cm
-
1
line and
V
Ga
-H centers, suggests that the line originates from isolated H in GaN. First-principles local-density-functional theory was used to calculate the H-related local mode frequencies of different structures and charge states of isolated H in GaN. The likely candidates for the assignment of the
1456
-
cm
-
1
line are discussed on basis of mode frequencies predicted for different structures. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0921-4526 1873-2135 |
DOI: | 10.1016/j.physb.2005.12.119 |