Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substrates

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 253; no. 1-2; pp. 145 - 148
• Main Authors: Cherkashin, N., Hÿtch, M.J., Snoeck, E., Hüe, F., Hartmann, J.M., Bogumilowicz, Y., Claverie, A.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.12.2006; Elsevier
• Subjects: Physics; SiGe; Strain measurement; 62.20.Dc; 68.37.Lp; Strain measurement; 61.66.Dk; SiGe; 61.50.Ah
• ISSN: 0168-583X; 1872-9584; 1872-9584; 0168-583X
• DOI: 10.1016/j.nimb.2006.10.051

This paper reports on quantitative measurements of strain in a 7.5nm compressive strained Ge/5.1nm tensile strained Si bi-layer grown by reduced pressure chemical vapour deposition on top of a relaxed Si0.5Ge0.5 virtual substrate. Geometric phase analysis of high resolution transmission electron microscopy images acquired using the SACTEM-Toulouse, an aberration-corrected transmission electron microscope, is used to quantify the strain within s-Ge and s-Si layers. Finite element simulations are carried out to estimate the impact of strain relaxation in thin areas of a TEM specimen. Experimental results are compared with the predictions of elasticity theory and finite element simulations.