The nitrogen-pair oxygen defect in silicon

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 36; no. 1-3; pp. 91 - 95
• Main Authors: Berg Rasmussen, F., Öberg, S., Jones, R., Ewels, C., Goss, J., Miro, J., Deák, P.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.01.1996; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Defect formation; Defects and impurities in crystals; microstructure; Exact sciences and technology; Impurities: concentration, distribution, and gradients; Impurity concentration, distribution, and gradients; Nitrogen; Oxygen; Physics; Scientific Computing; Silicon; Structure of solids and liquids; crystallography; Teknisk-vetenskapliga beräkningar; Oxygen; Silicon; Nitrogen; Defect formation; Absorption spectroscopy; Optical properties; Ab initio calculations; Cluster model; Defects
• ISSN: 0921-5107; 1873-4944; 1873-4944
• DOI: 10.1016/0921-5107(95)01250-8

The nitrogen-pair oxygen defect in silicon has been studied by infrared absorption spectroscopy on samples implanted with various combinations of 14N, 15N, 16O and 17O. The measurements give direct evidence for the involvement of nitrogen and oxygen in the defect and show that the impurity atoms comprising the defect are only weakly coupled. Ab initio cluster calculation on several models of the nitrogen-pair oxygen defect have been performed and are compared with experiment. Based on these investigations a model consisting of a bridging oxygen atom adjacent to the nitrogen pair is suggested.