Quantification of Aluminum Gallium Arsenide (AlGaAs) Wafer Plasma Using Calibration-Free Laser-Induced Breakdown Spectroscopy (CF-LIBS)

• Published in: Molecules (Basel, Switzerland) Vol. 27; no. 12; p. 3754
• Main Authors: Alrebdi, Tahani A., Fayyaz, Amir, Asghar, Haroon, Zaman, Asif, Asghar, Mamoon, Alkallas, Fatemah H., Hussain, Atif, Iqbal, Javed, Khan, Wilayat
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 10.06.2022; MDPI
• Subjects: Ablation; AlGaAs; Aluminum; Aluminum gallium arsenides; Arsenic; Calibration; CF-LIBS; compositional analysis; Electron energy; Emission spectra; Equilibrium; Gallium; Gallium arsenide; Industrial applications; Irradiance; Laser induced breakdown spectroscopy; Lasers; Line spectra; Neodymium lasers; Parameters; Plasma; plasma parameters; Q switched lasers; Qualitative analysis; Quantitative analysis; Semiconductor lasers; Spectroscopy; Spectrum analysis; YAG lasers
• ISSN: 1420-3049; 1420-3049
• DOI: 10.3390/molecules27123754

In this work, we report the results of the compositional analysis of an aluminum gallium arsenide (AlGaAs) sample using the calibration-free laser-induced breakdown spectroscopy (CF-LIBS) technique. The AlGaAs sample was doped with three various concentrations of gallium (Ga), arsenic (As), and aluminum (Al), as reported by the manufacturer, and the CF-LIBS technique was employed to identify the doping concentration. A pulsed Q-switched Nd: YAG laser capable of delivering 200 and 400 mJ energy at 532 and 1064 nm, respectively, was focused on the target sample for ablation, and the resulting emission spectra were captured using a LIBS 2000+ spectrometer covering the spectral range from 200 to 720 nm. The emission spectra of the AlGaAs sample yielded spectral lines of Ga, As, and Al. These lines were further used to calculate the plasma parameters, including electron temperature and electron number density. The Boltzmann plot method was used to calculate the electron temperature, and the average electron temperature was found to be 5744 ± 500 K. Furthermore, the electron number density was calculated from the Stark-broadened line profile method, and the average number density was calculated to be 6.5 × 1017 cm−3. It is further observed that the plasma parameters including electron temperature and electron number density have an increasing trend with laser irradiance and a decreasing trend along the plume length up to 2 mm. Finally, the elemental concentrations in terms of weight percentage using the CF-LIBS method were calculated to be Ga: 94%, Al: 4.77% and As: 1.23% for sample-1; Ga: 95.63%, Al: 1.15% and As: 3.22% for sample-2; and Ga: 97.32%, Al: 0.69% and As: 1.99% for sample-3. The certified concentrations were Ga: 95%, Al: 3% and As: 2% for sample-1; Ga: 96.05%, Al: 1% and As: 2.95% for sample-2; and Ga: 97.32%, Al: 0.69% and As: 1.99% for sample-3. The concentrations measured by CF-LIBS showed good agreement with the certified values reported by the manufacturer. These findings suggest that the CF-LIBS technique opens up an avenue for the industrial application of LIBS, where quantitative/qualitative analysis of the material is highly desirable.