Iron impurities in multicrystalline silicon studied by Mössbauer spectroscopy

Combining Mössbauer absorber experiments on 57Fe-deposited multicrystalline Si with a newly developed “Mössbauer spectroscopic microscope”, all 57Fe impurities incorporated in the sample can be detected and analyzed in terms of interstitials, substitutionals, small clusters, precipitates, such as ir...

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Published inPhysica. B, Condensed matter Vol. 401; pp. 119 - 122
Main Authors Yoshida, Y., Aoki, S., Sakata, K., Suzuki, Y., Adachi, M., Suzuki, K.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.12.2007
Subjects
Carrier trapping centers
Experiment
Group IV and compounds
Imaging
Photovoltaics
Group IV and compounds
Carrier trapping centers
Experiment
Imaging
Photovoltaics
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Summary:Combining Mössbauer absorber experiments on 57Fe-deposited multicrystalline Si with a newly developed “Mössbauer spectroscopic microscope”, all 57Fe impurities incorporated in the sample can be detected and analyzed in terms of interstitials, substitutionals, small clusters, precipitates, such as iron-silicide, and their distributions against grain boundaries and defect-rich zone. The charge states can be also investigated through the isomer shifts, so that the carrier trapping centres and their distributions would be identified.
Bibliography:SourceType-Scholarly Journals-2
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ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2007.08.126