Helium ion microscopy
Helium ion microcopy based on gas field ion sources represents a new ultrahigh resolution microscopy and nanofabrication technique. It is an enabling technology that not only provides imagery of conducting as well as uncoated insulating nanostructures but also allows to create these features. The la...
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Published in | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Vol. 32; no. 2 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
01.03.2014
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Online Access | Get full text |
ISSN | 2166-2746 1520-8567 2166-2754 |
DOI | 10.1116/1.4863676 |
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Abstract | Helium ion microcopy based on gas field ion sources represents a new ultrahigh resolution microscopy and nanofabrication technique. It is an enabling technology that not only provides imagery of conducting as well as uncoated insulating nanostructures but also allows to create these features. The latter can be achieved using resists or material removal due to sputtering. The close to free-form sculpting of structures over several length scales has been made possible by the extension of the method to other gases such as neon. A brief introduction of the underlying physics as well as a broad review of the applicability of the method is presented in this review. |
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AbstractList | Helium ion microcopy based on gas field ion sources represents a new ultrahigh resolution microscopy and nanofabrication technique. It is an enabling technology that not only provides imagery of conducting as well as uncoated insulating nanostructures but also allows to create these features. The latter can be achieved using resists or material removal due to sputtering. The close to free-form sculpting of structures over several length scales has been made possible by the extension of the method to other gases such as neon. A brief introduction of the underlying physics as well as a broad review of the applicability of the method is presented in this review. |
Author | Hlawacek, Gregor Poelsema, Bene van Gastel, Raoul Veligura, Vasilisa |
Author_xml | – sequence: 1 givenname: Gregor surname: Hlawacek fullname: Hlawacek, Gregor email: g.hlawacek@utwente.nl organization: Physics of Interfaces and Nanomaterials, MESA+ Research Institute, University of Twente, PO Box 217, 7500AE Enschede, The Netherlands – sequence: 2 givenname: Vasilisa surname: Veligura fullname: Veligura, Vasilisa organization: Physics of Interfaces and Nanomaterials, MESA+ Research Institute, University of Twente, PO Box 217, 7500AE Enschede, The Netherlands – sequence: 3 givenname: Raoul surname: van Gastel fullname: van Gastel, Raoul organization: Physics of Interfaces and Nanomaterials, MESA+ Research Institute, University of Twente, PO Box 217, 7500AE Enschede, The Netherlands – sequence: 4 givenname: Bene surname: Poelsema fullname: Poelsema, Bene organization: Physics of Interfaces and Nanomaterials, MESA+ Research Institute, University of Twente, PO Box 217, 7500AE Enschede, The Netherlands |
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