Effect of deep levels and interface states on the minority carrier lifetime control of trench-IGBTs by electron irradiation

• Published in: Physica. B, Condensed matter Vol. 376; pp. 395 - 398
• Main Authors: Nakabayashi, M., Ohyama, H., Shitogiden, H., Ueno, R., Miyagawa, Y., Hirao, T., Shigaki, K., Kudou, T., Simoen, E., Claeys, C.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.04.2006
• Subjects: DLTS; Electron irradiation; IGBT; Interface state; Interface state; IGBT; Electron irradiation; DLTS
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2005.12.102

The relationship between the minority carrier lifetime and bulk defects and between this lifetime and the interface states due to 2 MeV electron irradiation were investigated using deep-level transient spectroscopy (DLTS) and the charge separation technique, respectively. There seems to be a correlation between the change in lifetime and the interface traps generated due to electron irradiation. For the same level of interface trap density after a fluence of 1×10 14 e/cm 2 electron irradiation due to Fowler–Nordheim (FN) high electric field stress, the lifetime did not changed. Due to the creation of a deeper state, which is probably a defect including V 2 and H with increasing electron fluence, the lifetime decreases further. It is thought that the Si–H bonds at the Si–SiO 2 interface are broken and dissociated hydrogen is introduced in the silicon bulk during the electron irradiation.