Detailed carrier recombination in lateral composition modulation structure

Carrier recombination in lateral composition modulation (LCM) GaInP was probed in detail using time-resolved photoluminescence (TR-PL) and transmission electron microscopy (TEM). Upon SiO2 passivation, the time-transient decay of the PL peak was slower, and carrier lifetime was significantly enhance...

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Published inApplied physics express Vol. 11; no. 9; pp. 95801 - 95805
Main Authors Park, Kwangwook, Ravindran, Sooraj, Kang, Seokjin, Min, Jung-Wook, Hwang, Hyeong-Yong, Jho, Young-Dahl, Jo, Yong-Ryun, Kim, Bong-Joong, Kim, Jongmin, Lee, Yong-Tak
Format Journal Article
LanguageEnglish
Published United States The Japan Society of Applied Physics 01.09.2018
Japan Society of Applied Physics
Subjects
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
lateral composition modulation
semiconductors
superlattices
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Summary:Carrier recombination in lateral composition modulation (LCM) GaInP was probed in detail using time-resolved photoluminescence (TR-PL) and transmission electron microscopy (TEM). Upon SiO2 passivation, the time-transient decay of the PL peak was slower, and carrier lifetime was significantly enhanced from 25 to 230 ps for passivated LCM GaInP in comparison with that of bulk GaInP. This is due to the suppressed surface recombination of the irregular and wavy surface of LCM GaInP observed by TEM. Temperature-dependent TR-PL also showed a large decrease in carrier lifetime with an increase in temperature, indicating the dominance of Shockley-Read-Hall recombination due to the nonperiodicity of the LCM structure.
Bibliography:NREL/JA-5K00-72512
AC36-08GO28308
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.11.095801