Polyurethane triblock copolymer gate dielectrics for low-voltage organic thin-film transistors

Novel polyurethane triblock copolymers comprising polycaprolactone diol (PCL), 1,6-hexamethylene diisocyanate (HMDI), and polyethylene glycol (PEG) were synthesized for use as gate dielectric for organic thin-film transistors (OTFTs). Thin films of polyurethane gate dielectrics processed from soluti...

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Bibliographic Details
Published inJournal of industrial and engineering chemistry (Seoul, Korea) Vol. 71; pp. 460 - 464
Main Authors Kim, Dongkyu, Kim, Choongik, Earmme, Taeshik
Format Journal Article
LanguageEnglish
Published Elsevier B.V 25.03.2019
한국공업화학회
Subjects
Copolymer
Dielectric
Hysteresis
Organic thin-film transistors
Urethane
화학공학
Urethane
Copolymer
Dielectric
Hysteresis
Organic thin-film transistors
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Summary:Novel polyurethane triblock copolymers comprising polycaprolactone diol (PCL), 1,6-hexamethylene diisocyanate (HMDI), and polyethylene glycol (PEG) were synthesized for use as gate dielectric for organic thin-film transistors (OTFTs). Thin films of polyurethane gate dielectrics processed from solution exhibit excellent insulating properties (∼7×10−7A/cm2 at 1V) as well as large areal capacitance (170nF/cm2) with film thickness of ∼50nm. OTFTs are fabricated with representative n-channel organic semiconductor (N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide; PTCDI-C13) using the developed gate dielectrics, and the resulting devices show decent electrical performance with negligible hysteresis at low operating voltage of 1V.
ISSN:1226-086X
1876-794X
DOI:10.1016/j.jiec.2018.12.003