X-ray photoelectron spectroscopy study of Al- and N- co-doped p-type ZnO thin films
The chemical state of nitrogen, aluminum, oxygen and zinc in Al–N co-doped p-type ZnO thin films was investigated by X-ray photoelectron spectroscopy (XPS). N 1s peak were detected in both the two p-type ZnO thin films, showing two components. The higher binding energy peak may be due to the Al–N O–...
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Published in | Journal of crystal growth Vol. 311; no. 8; pp. 2341 - 2344 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.04.2009
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | The chemical state of nitrogen, aluminum, oxygen and zinc in Al–N co-doped p-type ZnO thin films was investigated by X-ray photoelectron spectroscopy (XPS). N
1s peak were detected in both the two p-type ZnO thin films, showing two components. The higher binding energy peak may be due to the Al–N
O–H species, and the lower one perhaps derive from the (NH
2)
− cluster for the ammonia introduction. These two peaks both contribute to the p-type behavior in the ZnO films. A symmetry 74.4
eV binding energy in Al
2p3/2 photoelectron peaks revealed an Al–N bonding state, a key factor to the co-doping method. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 AC36-08GO28308 USDOE Office of Solar Energy Technologies Program |
ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2009.01.128 |