X-ray photoelectron spectroscopy study of Al- and N- co-doped p-type ZnO thin films

The chemical state of nitrogen, aluminum, oxygen and zinc in Al–N co-doped p-type ZnO thin films was investigated by X-ray photoelectron spectroscopy (XPS). N 1s peak were detected in both the two p-type ZnO thin films, showing two components. The higher binding energy peak may be due to the Al–N O–...

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Published inJournal of crystal growth Vol. 311; no. 8; pp. 2341 - 2344
Main Authors Yuan, G.D., Ye, Z.Z., Huang, J.Y., Zhu, Z.P., Perkins, C.L., Zhang, S.B.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.04.2009
Elsevier
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Summary:The chemical state of nitrogen, aluminum, oxygen and zinc in Al–N co-doped p-type ZnO thin films was investigated by X-ray photoelectron spectroscopy (XPS). N 1s peak were detected in both the two p-type ZnO thin films, showing two components. The higher binding energy peak may be due to the Al–N O–H species, and the lower one perhaps derive from the (NH 2) − cluster for the ammonia introduction. These two peaks both contribute to the p-type behavior in the ZnO films. A symmetry 74.4 eV binding energy in Al 2p3/2 photoelectron peaks revealed an Al–N bonding state, a key factor to the co-doping method.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
AC36-08GO28308
USDOE Office of Solar Energy Technologies Program
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2009.01.128