Ar plasma irradiation effects in atomically controlled Si epitaxial growth

• Published in: Applied surface science Vol. 224; no. 1; pp. 210 - 214
• Main Authors: Muto, Daisuke, Sakuraba, Masao, Seino, Takuya, Murota, Junichi
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 15.03.2004; Elsevier Science
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electron-cyclotron resonance; Exact sciences and technology; Physics; Plasma enhanced chemical vapor deposition; Si epitaxial growth; SiH 4; Electron-cyclotron resonance; SiH 4; 85.40.Ux; Plasma enhanced chemical vapor deposition; 81.15.Gh; 82.65.-I; Si epitaxial growth; Atomic layer method; Epitaxial layers; Electron cyclotron-resonance; SiH4; Physical radiation effects; Epitaxy; Crystallinity; Film growth; 85.40.Ux Electron-cyclotron resonance; Silicon; PECVD
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2003.08.048

Effect of Ar plasma on the quality of atomic layer-by-layer Si epitaxial growth on Si(1 0 0) is investigated using the electron-cyclotron resonance (ECR) plasma enhanced chemical vapor deposition system. Adsorbed SiH 4 molecules on monohydride Si(1 0 0) are effectively decomposed and form Si epitaxial film under the Ar plasma irradiation with the maximum and peak ion energies of 7 and 1–2 eV, respectively. As a result, atomic layer-by-layer control of Si epitaxial growth at a lower temperature below 100 °C is achieved by alternate exposure of Si(1 0 0) to SiH 4 and Ar plasma. The plasma exposure also induces Ar incorporation in the film, and it is suggested that lowering the incorporated Ar amount below 2×10 21 cm −3 is necessary to avoid degradation in crystallinity.