Transport properties of FeSe epitaxial thin films under in-plane strain

We demonstrate successful fabrication of FeSe films with various magnitude of lattice strain, from tensile to compressive. The superconducting transition temperature, T c, shows the systematic change by in-plane strain. It reaches 12 K for the films with compressive strain whereas the superconductiv...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 1054; no. 1; p. 12023
Main Authors Kawai, M, Nabeshima, F, Maeda, A
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.07.2018
Subjects
Carrier density
Compressive properties
Lattice strain
Physics
Plane strain
Superconductivity
Superconductors
Temperature
Tensile strain
Thin films
Transition temperature
Transport properties
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Summary:We demonstrate successful fabrication of FeSe films with various magnitude of lattice strain, from tensile to compressive. The superconducting transition temperature, T c, shows the systematic change by in-plane strain. It reaches 12 K for the films with compressive strain whereas the superconductivity disappears for the films with large tensile strain. The structural transition temperature, T s, decreases slightly as the in-plane strain is more compressive. In other words, there is a negative correlation between T c and T s. It is also found that both the hole and the electron carrier densities evaluated by transport properties increase as the in-plane strain is more compressive. Therefore, there is a clear correlation between T c and the carrier densities, which suggests that it is essential for the T c enhancement of iron-based superconductors to increase carrier densities.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1054/1/012023