Navigation aids in the search for future high- k dielectrics: Physical and electrical trends

• Published in: Solid-state electronics Vol. 51; no. 4; pp. 622 - 626
• Main Authors: Engström, O., Raeissi, B., Hall, S., Buiu, O., Lemme, M.C., Gottlob, H.D.B., Hurley, P.K., Cherkaoui, K.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.04.2007
• Subjects: CMOS; Dielectric constant; High- k dielectrics; Rare earth oxides; CMOS; Dielectric constant; High- k dielectrics; Rare earth oxides

From experimental literature data on metal oxides combined with theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investi...