Navigation aids in the search for future high- k dielectrics: Physical and electrical trends

From experimental literature data on metal oxides combined with theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investi...

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Bibliographic Details
Published inSolid-state electronics Vol. 51; no. 4; pp. 622 - 626
Main Authors Engström, O., Raeissi, B., Hall, S., Buiu, O., Lemme, M.C., Gottlob, H.D.B., Hurley, P.K., Cherkaoui, K.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.04.2007
Subjects
CMOS
Dielectric constant
High- k dielectrics
Rare earth oxides
CMOS
Dielectric constant
High- k dielectrics
Rare earth oxides
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Summary:From experimental literature data on metal oxides combined with theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investigated so far have properties meeting the demands for k and energy band offset values in the development of CMOS down to 22 nm.
ISSN:0038-1101
1879-2405
1879-2405
DOI:10.1016/j.sse.2007.02.021