TiN Deposition and Process Diagnostics using Remote Plasma Sputtering

The discharge voltage--current characteristics and the optical diagnostics of a remote plasma sputtering system called by high density plasma assisted sputtering source (HiPASS) were investigated. The remote plasma was generated by the hollow cathode discharge (HCD) gun and was transported to the ta...

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Published inJapanese Journal of Applied Physics Vol. 52; no. 8; pp. 085501 - 085501-6
Main Authors Yang, Wonkyun, Kim, Gi-Taek, Lee, Seunghun, Kim, Do-Geun, Kim, Jong-Kuk
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.08.2013
Subjects
Deposition
Diagnostic systems
Discharge
Electric potential
Plasma (physics)
Sputtering
Titanium nitride
Voltage
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Summary:The discharge voltage--current characteristics and the optical diagnostics of a remote plasma sputtering system called by high density plasma assisted sputtering source (HiPASS) were investigated. The remote plasma was generated by the hollow cathode discharge (HCD) gun and was transported to the target surface by external electromagnet coils. This showed a wide process window because the sputtering voltage and current could be individually controlled. The ion density and energy distribution could be also controlled unlike the conventional magnetron sputtering. Titanium nitride films were deposited under different sputtering voltage. The high voltage mode induced the high ionization ratio of the sputtered atoms and the high ion energy toward the substrate. That resulted in the enlarged grain size, and the preferred orientation toward (220). Eventually, this optimized condition of HiPASS obtained the best hardness of TiN films to be about 48 GPa at the sputtering voltage of $-800$ V.
Bibliography:(Color online) Schematics of high density plasma assisted sputtering source system. (a) Sputtering current as a function of sputtering voltage for the each HCD current, and (b) sputtering current as a function of HCD current for the each sputtering voltage. Change of the voltage between the cathode and the anode, and the ground and the anode as a function of HCD current. IED for various HCD current measured on the target surface by RFEA. (a) Optical emission spectroscopy spectrum of Ar plasma and (b) normalized ratio of Ar + /Ar * for various HCD current. (a) Optical emission spectroscopy spectrum of Ar, N 2 , and sputtered Ti, (b) normalized ratio of Ti + /Ti * , and (c) normalized ratio of Ar + /Ar * and N 2 * /N 2 + by different sputtering voltage. XRD patterns of TiN films deposited by the sputtering voltage of 300, 600, and 800 V. Hardness of TiN films deposited by different sputtering voltage as a function of the displacement into surface.
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.085501